Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy (Articolo in rivista)

Type
Label
  • Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Raineri V., Calcagno L., Giannazzo F., Goghero D., Musumeci F., Roccaforte F., La Via F. (2003)
    Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Raineri V., Calcagno L., Giannazzo F., Goghero D., Musumeci F., Roccaforte F., La Via F. (literal)
Pagina inizio
  • 375 (literal)
Pagina fine
  • 378 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 433-436 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM, Dipartimento di Fisica Università di Catania (literal)
Titolo
  • Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy (literal)
Abstract
  • Scanning Capacitance Microscopy has been used to determine the carrier concentration profiles of N implanted 6H-SiC samples. The implantation dose and target temperature was chosen to avoid the formation of extended defects after annealing. Thermal treatments were performed directly in a conventional furnace with a low ramp rate (0.05¬?C/s) and with a high ramp rate (200 ¬?C/s). When performing high ramp rate thermal processes before the conventional furnace a higher activation occurs. (literal)
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