Ionizing radiation effects on Non Volatile Read Only Memory cells (Articolo in rivista)

Type
Label
  • Ionizing radiation effects on Non Volatile Read Only Memory cells (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/TNS.2012.2219071 (literal)
Alternative label
  • S. Libertino, D. Corso, M. Lisiansky, Y. Roizin, F. Palumbo, F. Principato, C. Pace, P. Finocchiaro, and S. Lombardo (2012)
    Ionizing radiation effects on Non Volatile Read Only Memory cells
    in IEEE transactions on nuclear science
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • S. Libertino, D. Corso, M. Lisiansky, Y. Roizin, F. Palumbo, F. Principato, C. Pace, P. Finocchiaro, and S. Lombardo (literal)
Pagina inizio
  • 3016 (literal)
Pagina fine
  • 3020 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 59 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Istituto per la microelettronica e microsistemi (IMM) of the National Council of Research (CNR), 95121 Catania, Italy Tower Semiconductor, Migdal Haemek, 23105, Israel Consejo Nacional de Investigaciones Científicas y Técnicas--Comision Nacional de Energia Atomica (CONICET-CNEA), 1650 Buenos Aires, Argentina Department of Physics, University of Palermo, 90128 Palermo, Italy Department of Electronics, Computer Science and Systems, University of Calabria, Rende (CS), Italy INFN Laboratori Nazionali del Sud, 95100 Catania, Italy (literal)
Titolo
  • Ionizing radiation effects on Non Volatile Read Only Memory cells (literal)
Abstract
  • Threshold voltage (V-th) and drain-source current (I-DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V-th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I-DS with the total irradiation dose. A brief physical explanation is also provided. (literal)
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