Surface chemical structure of SiO2-TiO2 sol-gel powders (Contributo in atti di convegno)

Type
Label
  • Surface chemical structure of SiO2-TiO2 sol-gel powders (Contributo in atti di convegno) (literal)
Anno
  • 1994-01-01T00:00:00+01:00 (literal)
Alternative label
  • G.M. Ingo, G. Padeletti, S. Dirè, F. Babonneau (1994)
    Surface chemical structure of SiO2-TiO2 sol-gel powders
    in 1994 Materials Research Society Symposium - Better Ceramics Trhough Chemistry VI, San Francisco, CA, USA, 4 - 8 Aprile 1994
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G.M. Ingo, G. Padeletti, S. Dirè, F. Babonneau (literal)
Pagina inizio
  • 421 (literal)
Pagina fine
  • 426 (literal)
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  • BETTER CERAMICS THROUGH CHEMISTRY VI (literal)
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  • Volume 346 (literal)
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  • Materials Research Society Symposium - Proceedings Volume 346 (literal)
Rivista
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  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • G.M. Ingo [1], G. Padeletti [1], S. Dirè [2], F. Babonneau [3] [1] Istituto di Chimica dei Materiali-CNR, Area della Ricerca di Roma 1, via Salaria Km 29.3, 00015 Monterotondo, Rome, Italy [2] Dipartimento di Ingegneria dei Materiali, Universitci di Trento, 38050 Mesiano-Trento, Italy [3] Laboratoire de Chimie de la Mat&e Condenke, URA CNRS 1466, Universite' Pierre et Marie Curie, 4 Jussieu, 75252 Paris, France (literal)
Titolo
  • Surface chemical structure of SiO2-TiO2 sol-gel powders (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 1-55899-246-4 (literal)
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  • Vari (literal)
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  • A. K. Cheetham, C. Jeffrey Brinker, Martha L. Mecartney (literal)
Abstract
  • Amorphous SiO2, TiO2 and x SiO2-(1-x) TiO2 powders, with nominal values of x = 0.9, 0.7 and 0.5, have been prepared via sol-gel, using silicon tetrahoxysilane (TEOS) and titanium tetraisopropoxide Ti(OPri)4. X-ray photoelectron spectroscopy (XPS) and X-ray induced Auger electron spectroscopy (XAES) are used for studying the surface chemical structure of the powders as a function of the air thermal treatment temperature up to 1273 K. For the whole range of temperature, XPS and XAES signals indicate that silicon and titanium are present as Si4+ and Ti4+ oxides. From the line shape of the O 1s peak, it is possible to distinguish between the single O-Ti and O-Si bonds and to disclose also the presence of Si-O-Ti cross linking bonds that are supposed to act as bridges between SiO2 and TiO2 moieties. Starting from 873 K, the Si-O-Ti bonds are broken and formation of a low amount of new Ti-O and a higher amount of Si-O bonds takes place. Si/Ti atomic ratios obtained by curve fitting the O 1s peaks and from Ti 2p3/2 and Si 2p peaks, confirm the silicon oxide surface enrichment. Furthermore, with increasing temperature, XAES data indicate the formation of crystalline phases. (literal)
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