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Calculations of R(T) and I(V) characteristics of the n-doped BaTiO3 ceramics with PTCR properties (Articolo in rivista)
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- Calculations of R(T) and I(V) characteristics of the n-doped BaTiO3 ceramics with PTCR properties (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
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- L. Mitoseriu; M. Viviani; M. T. Buscaglia; V. Buscaglia; A. Testino; P. Nanni (literal)
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- http://puma.isti.cnr.it/linkres.php?resource=cnr.ieni/cnr.ieni.ge/2004-A2-001 (literal)
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- In: Euro Ceramics VIII : 8th Conference and Exhibition of the European Ceramic Society (Istanbul, Turkey, 29 June - 3 July 2003). Proceedings, pp. 1253-1256. H. Mandal, L. Öveçoglu (eds.). (Key Engineering Materials, vol. 264-268). Trans Tech Publications Inc., 2004. (literal)
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- Dept. of Electricity, Al. I. Cuza University, Bv. Carol 11, Iasi, 6600, Romania; DICheP, Univ. of Genoa, P.le Kennedy 1, Genoa, I-16129, Italy; IENI - CNR, Via de Marini 6, Genoa, I-16149, Italy (literal)
- Titolo
- Calculations of R(T) and I(V) characteristics of the n-doped BaTiO3 ceramics with PTCR properties (literal)
- Abstract
- The electrical characteristics of the n-doped BaTiO3 ceramics at various temperatures
were obtained by considering their coupled semiconductive and ferroelectric properties. The
ferroelectric lattice was described by the Landau-Devonshire theory and the free electron system by
a Double Barrier Schottky model. The resistivity-temperature R(T) and current-voltage I(V)
characteristic curves were simulated for various model parameters. The present theoretical approach
explains the R(T) behaviour in a large range of temperatures, including the ferro-para transition one. (literal)
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