Preparation and characterization of metallorganic chemical vapour deposited molybdenum (II) oxide (MoO) thin films (Articolo in rivista)

Type
Label
  • Preparation and characterization of metallorganic chemical vapour deposited molybdenum (II) oxide (MoO) thin films (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • Ilori O.O., Osasona O., Eleruja M.A., Egharevba G.O., Adegboyega G.A., Chiodelli G., Boudreault G., Jeynes C., Ajayi E.O.B. (2005)
    Preparation and characterization of metallorganic chemical vapour deposited molybdenum (II) oxide (MoO) thin films
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ilori O.O., Osasona O., Eleruja M.A., Egharevba G.O., Adegboyega G.A., Chiodelli G., Boudreault G., Jeynes C., Ajayi E.O.B. (literal)
Pagina inizio
  • 84 (literal)
Pagina fine
  • 89 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 472 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Preparation and characterization of metallorganic chemical vapour deposited molybdenum (II) oxide (MoO) thin films (literal)
Abstract
  • Thin films of molybdenum monoxide were deposited by metallorganic chemical vapour deposition and characterized using Rutherdford backscattering spectroscopy, Fourier Transformed Infrared and UV–Visible spectroscopies, X-ray diffraction, van der Pauw conductivity measurement and impedance spectroscopy measurement. MoO2(C5H7O2)2 was used as a precursor. Results show that the film is crystalline and semiconducting. Optical characterization gave an energy gap of 3.02 eV. DC conductivity measurements show the conductivity mechanism to be that of small polaron hopping with an activation energy of 0.992 eV and also the existence of a sharp transition in conductivity at about 450 C. Impedance data show that the film has two conductivity phases. (literal)
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