MOCVD route to chromium carbonitride thin films using Cr(NEt2)(4) as single-source precursor: Growth and mechanism (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• MOCVD route to chromium carbonitride thin films using Cr(NEt2)(4) as single-source precursor: Growth and mechanism (Articolo in rivista) (literal)

Anno

• 1997-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1002/cvde.19970030305 (literal)

Alternative label

• Ossola F.; Maury F. (1997)
  MOCVD route to chromium carbonitride thin films using Cr(NEt2)(4) as single-source precursor: Growth and mechanism
  in Chemical vapor deposition (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Ossola F.; Maury F. (literal)

Pagina inizio

• 137 (literal)

Pagina fine

• 143 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://onlinelibrary.wiley.com/doi/10.1002/cvde.19970030305/abstract;jsessionid=C6BE385971442967FE83D317A96CB5BF.d02t03 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 3 (literal)

Rivista

• Chemical vapor deposition (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)
• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1 Ist. Chim. Tecnologie Inorganiche M., Area della Ricerca del CNR, Corso Stati Uniti 4, I-35127 Padova, Italy / 2 Lab. Reactiv. et Protect. des Mat., CNRS-INPT, Ecl. Natl. Sup. de Chimie, 118 Route de Narbonne, F-31077 Toulouse Cedex 4, France (literal)

Titolo

• MOCVD route to chromium carbonitride thin films using Cr(NEt2)(4) as single-source precursor: Growth and mechanism (literal)

Abstract

• Chromium carbonitride coatings with a low nitrogen content were deposited by low pressure MOCVD in the temperature range 573-793 K using Cr(NEt2)(4) as single-source precursor. As-deposited films are amorphous and crystallize upon annealing at 873 K to form an orthorhombic ternary phase. They exhibit a high hardness and their resistivity decreases by increasing the growth temperature. This dependence has been correlated to their microstructure. Quantitative H-1 NMR analysis of the by-products of the MOCVD reaction has been performed. The quasi-equimolecular ratio of the by-products EtN=CHMe and HNEt2 suggests that most of the NEt2 ligands are removed by a stepwise mechanism, which is discussed. (literal)

Prodotto di

• Istituto di chimica inorganica e delle superfici (ICIS) (Istituto)

Autore CNR

• FRANCO OSSOLA (Unità di personale interno)

Insieme di parole chiave

• Keywords of "MOCVD route to chromium carbonitride thin films using Cr(NEt2)(4) as single-source precursor: Growth and mechanism" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto di chimica inorganica e delle superfici (ICIS) (Istituto)

Autore CNR di

• FRANCO OSSOLA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Chemical vapor deposition (Rivista)

Insieme di parole chiave di

• Keywords of "MOCVD route to chromium carbonitride thin films using Cr(NEt2)(4) as single-source precursor: Growth and mechanism" (Insieme di parole chiave)