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Optical and structural characterization of GaN/AlN quantum dots grown on Si(111) (Articolo in rivista)

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Optical and structural characterization of GaN/AlN quantum dots grown on Si(111) (Articolo in rivista) (literal)

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Salviati, G.; Martinez, O.; Mazzoni, M.; Rossi, F.; Armani, N.; Gucciardi, P.; Vinattieri, A.; Alderighi, D.; Colocci, M.; Gonzalez, M.A.; Sanz-Santacruz, L.F.; Massies, J. (2002)
Optical and structural characterization of GaN/AlN quantum dots grown on Si(111)
in Journal of physics. Condensed matter (Print); IOP Publishing Ltd. (Institute of Physics Publishing Ltd), "Bristol ; London" (Regno Unito)
(literal)

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Salviati, G.; Martinez, O.; Mazzoni, M.; Rossi, F.; Armani, N.; Gucciardi, P.; Vinattieri, A.; Alderighi, D.; Colocci, M.; Gonzalez, M.A.; Sanz-Santacruz, L.F.; Massies, J. (literal)

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1 IMEM CNR Inst, I-43010 Fontanini Parma, Italy; 2 ETSII, Valladolid 47011, Spain; 3 CNR, Ist Proc Chim Fis, Sez Messina, I-98123 Messina, Italy; 4 Univ Florence, INFM, I-50019 Florence, Italy; 5 Univ Florence, Dipartimento Fis, I-50019 Florence, Italy; 6 Univ Florence, LENS, I-50019 Florence, Italy; 7 CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France (literal)

Titolo

Optical and structural characterization of GaN/AlN quantum dots grown on Si(111) (literal)

Abstract

GaN/AlN-based heterostructures made from stacked GaN quantum dots (QDs) have been studied by means of the cathodoluminescence (CL), photoluminescence (PL), near-field scanning optical microscopy (NSOM) and micro-Raman techniques. The influence of the number of stacked layers (2-85) and of the different electron beam injection conditions on the main optical emissions was studied by means of CL, revealing transitions from 2.5 and 4.4 eV. Power-dependent cross-sectional CL studies revealed a large (87-180 meV) blue-shift only for the optical bands located in the 2.5 and 3.1 eV spectral range. This observation enabled us to assign a zero-dimensional character to those bands. The results were confirmed by PL and NSOM studies. Different values of the blue-shift were found for specimens with different numbers of stacked layers. This suggested the presence of different residual strains inside the structures, as confirmed by micro-Raman studies. An inhomogeneous distribution of the QD emissions was also observed both in the plane and along the growth direction. (literal)

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