Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical microscopy (Articolo in rivista)

Type
Label
  • Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical microscopy (Articolo in rivista) (literal)
Anno
  • 2001-01-01T00:00:00+01:00 (literal)
Alternative label
  • Gucciardi, P.G.; Vinattieri, A.; Colocci, M.; Damilano, B.; Grandjean, N.; Semond, F.; Massies, J. (2001)
    Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical microscopy
    in Journal of microscopy (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Gucciardi, P.G.; Vinattieri, A.; Colocci, M.; Damilano, B.; Grandjean, N.; Semond, F.; Massies, J. (literal)
Pagina inizio
  • 212 (literal)
Pagina fine
  • 217 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 202 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Ist Nazl Fis Mat, Dipartimento Fis, I-50125 Florence, Italy [ 2 ] LENS, I-50125 Florence, Italy [ 3 ] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France (literal)
Titolo
  • Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical microscopy (literal)
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Autore CNR

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