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Dependence of scattered ion yield on the incident energy: Ne+ on pure gallium and indium (Articolo in rivista)

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Dependence of scattered ion yield on the incident energy: Ne+ on pure gallium and indium (Articolo in rivista) (literal)

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Tolstogouzov, A.1, Daolio, S.2, Pagura, C.3, Greenwood, C.L.4 (2003)
Dependence of scattered ion yield on the incident energy: Ne+ on pure gallium and indium
in Surface science
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I.F. 2.140 Questo lavoro è finalizzato a validare sul piano teorico e pratico la spettrometria di ioni scatterati filtrata in massa (MARISS Mass resolved ion scattering spectrometry) come tecnica quantitativa nel campo dei semiconduttori. Il lavoro dirime una questione annosa, dove dati risalenti ai primi anni 80, che attribuendo una dipendenza della resa ionica dalla energia di bombardamento non monotonica e con fenomeni oscillatori tendeva a far trascurare le interessanti proprietà applicative di queste misure. La tecnica in oggetto è infatti sensibile al primo monolayer del campione e ha una potenziale risoluzione in profondità di ordine nanometrico (literal)

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A detailed experimental study of the ion yield versus the incident energy (0.42.2 eV) for Ne+ isotopes scattered at 120° from pure gallium and indium targets has been performed by MARISS. The results are summarized as follows: For both two targets, the ion yield curves exhibited a broad maximum below 0.81 keV (with a lower position for Ne+ on In) followed by a monotonous decrease yield. No experimental evidence for the oscillatory features, neither for Ga nor for In, was found. For the distance of closest approach, which was larger than 0.38 Å (Ne+ on Ga) and 0.45 Å (Ne+ on In) in our experiments, the quasi-resonant neutralization is negligible, since interpenetration of the corresponding core shell of the Ga (In) target atom and 2p shell of the Ne ion does not occur. The energy dependence of ion-survival probability was explained as a complex interplay of the Auger neutralization with the characteristic velocity vc=(0.9±0.1)×107 cm/s for Ne+ on Ga, and the CIN and reionization. The later ones were considered as significant processes at energies larger than 0.81.0 keV (d0.50.55 Å), and the CIN was more effective than the inverse process. A visible influence of isotope effect on neutralization was not found. The possible difference in the collision trajectories between two Ne+ isotopes at the same speed does not noticeably affect the scattered ion yields. (literal)

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1 2 3 Istituto per lEnergetica e le Interfasi (CNR IENI), Corso Stati Uniti 4, Padua 35127, Italy 4 Hiden Ltd, 420 Europa Boulevard, Gemini Business Park, Warrington WA5 5UN, UK (literal)

Titolo

Dependence of scattered ion yield on the incident energy: Ne+ on pure gallium and indium (literal)

Abstract

An experimental study of the ion yield dependence on the incident energy (0.42.2 keV) for Ne+ isotopes scattered at 120° from pure gallium and indium targets has been carried out by mass-resolved ion-scattering spectrometry. For both two targets, the ion yield curves exhibited a broad maximum below 0.81 keV (with a lower position for Ne+ on In) followed by a monotonous decrease yield without any oscillatory features. The energy dependence of ion-survival probability was explained as a complex interplay of the Auger neutralization with the characteristic velocity vc=(0.9±0.1)×107 cm/s for Ne+ on Ga, and the collision-induced neutralization and reionization. The later ones were significant processes at the energies larger than 0.81.0 keV or, in terms of the distance of closest approach, d0.50.55 Å; the collision-induced neutralization was more effective than the inverse process. No visible influence of isotope effect on charge exchange was found. The ion-survival probability versus the inverse ion velocity displayed an independence on the mass of Ne+ projectiles. (literal)

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