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Blocking growth by an electrically active subsurface layer: The effect of si as an antisurfactant in the growth of GaN (Articolo in rivista)

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Blocking growth by an electrically active subsurface layer: The effect of si as an antisurfactant in the growth of GaN (Articolo in rivista) (literal)

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T. Markurt, L. Lymperakis, J. Neugebauer, P. Drechsel, P. Stauss, T. Schulz, T. Remmele, V. Grillo, E. Rotunno, and M. Albrecht (2013)
Blocking growth by an electrically active subsurface layer: The effect of si as an antisurfactant in the growth of GaN
in Physical review letters; American Physical Society (APS), College Pk (Stati Uniti d'America)
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T. Markurt, L. Lymperakis, J. Neugebauer, P. Drechsel, P. Stauss, T. Schulz, T. Remmele, V. Grillo, E. Rotunno, and M. Albrecht (literal)

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1 Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany; 2 Max-Planck-Institut fu¨r Eisenforschung, Max-Planck-Strasse 1, 40237 Du¨sseldorf, Germany; 3 OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany; 4 National Research Centre S3 CNR-INFM, Via Campi 213/A, 41125 Modena, Italy; 5 National Research Centre IMEM-CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy (literal)

Titolo

Blocking growth by an electrically active subsurface layer: The effect of si as an antisurfactant in the growth of GaN (literal)

Abstract

Combining aberration corrected high resolution transmission electron microscopy and density functional theory calculations we propose an explanation of the antisurfactant effect of Si in GaN growth. We identify the atomic structure of a Si delta-doped layer (commonly called SiNx mask) as a SiGaN3 monolayer that resembles a sqrt(3) x sqrt(3) R30? surface reconstruction containing one Si atom, one Ga atom, and a Ga vacancy (VGa) in its unit cell. Our density functional theory calculations show that GaN growth on top of this SiGaN3 layer is inhibited by forming an energetically unfavorable electrical dipole moment that increases with layer thickness and that is caused by charge transfer between cation dangling bonds at the surface to VGa bound at subsurface sites. (literal)

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