Simulation of positive temperature coefficient of resistivity (PTCR) behaviour in n-doped BaTiO3 ceramics (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Simulation of positive temperature coefficient of resistivity (PTCR) behaviour in n-doped BaTiO3 ceramics (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1143/JJAP.41.7189 (literal)

Alternative label

• Mitoseriu L., Viviani M., Ricinschi D., Fedor C., Nanni P. (2002)
  Simulation of positive temperature coefficient of resistivity (PTCR) behaviour in n-doped BaTiO3 ceramics
  in Japanese journal of applied physics; elsevier B.V., Amsterdam (Paesi Bassi)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Mitoseriu L., Viviani M., Ricinschi D., Fedor C., Nanni P. (literal)

Pagina inizio

• 7189 (literal)

Pagina fine

• 7194 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://jjap.jsap.jp/link?JJAP/41/7189/ (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 41 (literal)

Rivista

• Japanese journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 11B (literal)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Department of Electricity and Electronics Iasi, Faculty of Physics, \"Al. I. Cuza\" University, Blvd. Copou, 11, Iasi, 6600, Romania; DICheP, University of Genoa, P.le Kennedy 1, I-16129 Genoa, Italy; IENI-CNR, Via de Marini 6, Genova, I-16149, Italy; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan (literal)

Titolo

• Simulation of positive temperature coefficient of resistivity (PTCR) behaviour in n-doped BaTiO3 ceramics (literal)

Abstract

• A theoretical approach taking into consideration the semiconductor-ferroelectric properties of n-doped BaTiO3 ceramics was used for describing the resistivity-temperature dependence over a large range of temperatures. A limited range of the donor composition for which the material exhibits a semiconductive behavior at room temperature is obtained from the model, as experimental data reported in literature show. Resistivity-temperature curves for various model parameters were simulated and the role of donor density and surface state energy in determining the positive temperature coefficient of resistivity (PTCR) parameters were obtained and discussed in connection with the processing parameters. (literal)

Editore

• elsevier B.V. (Editore)

Prodotto di

• Sintesi di ossidi funzionali avanzati (ET.P06.008.002) (Modulo)
• Institute of Condensed Matter Chemistry and Energy Technologies (ICMATE) (Istituto)
• Materiali elettroceramici per l’energetica e l’elettronica (ET.P06.008.001) (Modulo)

Autore CNR

• MASSIMO VIVIANI (Persona)

Insieme di parole chiave

• Keywords of "Simulation of positive temperature coefficient of resistivity (PTCR) behaviour in n-doped BaTiO3 ceramics" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute of Condensed Matter Chemistry and Energy Technologies (ICMATE) (Istituto)
• Materiali elettroceramici per l’energetica e l’elettronica (ET.P06.008.001) (Modulo)
• Sintesi di ossidi funzionali avanzati (ET.P06.008.002) (Modulo)

Autore CNR di

• MASSIMO VIVIANI (Persona)

Editore di

• elsevier B.V. (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Japanese journal of applied physics (Rivista)

Insieme di parole chiave di

• Keywords of "Simulation of positive temperature coefficient of resistivity (PTCR) behaviour in n-doped BaTiO3 ceramics" (Insieme di parole chiave)