Self-field effects in window-type Josephson tunnel junctions (Articolo in rivista)

Type
Label
  • Self-field effects in window-type Josephson tunnel junctions (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0953-2048/26/5/055021 (literal)
Alternative label
  • R. MONACO, V.P. Koshelets, A. Mukhortova, J. Mygind (2013)
    Self-field effects in window-type Josephson tunnel junctions
    in Superconductor science and technology (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • R. MONACO, V.P. Koshelets, A. Mukhortova, J. Mygind (literal)
Pagina inizio
  • 055021 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 26 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Monaco, R (Reprint Author), CNR, Ist Cibernet, I-80078 Comprensorio Olivetti, Pozzuoli, Italy. Monaco, Roberto, CNR, Ist Cibernet, I-80078 Comprensorio Olivetti, Pozzuoli, Italy. Monaco, Roberto, Univ Salerno, Fac Sci, I-84084 Fisciano, Italy. Koshelets, Valery P.; Mukhortova, Anna, Russian Acad Sci, Kotelnikov Inst Radio Engn \& Elect, Moscow 125009, Russia. Mukhortova, Anna, Moscow Inst Phys \& Technol, Dolgoprudnyi 141700, Moscow Region, Russia. Mygind, Jesper, Tech Univ Denmark, DTU Phys, DK-2800 Lyngby, Denmark. (literal)
Titolo
  • Self-field effects in window-type Josephson tunnel junctions (literal)
Abstract
  • The properties of Josephson devices are strongly affected by geometrical effects such as those associated with the magnetic field induced by the bias current. The generally adopted analysis of Owen and Scalapino (1967 Phys. Rev. 164, 538) for the critical current, I-c, of an in-line Josephson tunnel junction in the presence of an in-plane external magnetic field, H-e, is revisited and extended to junctions whose electrodes can be thin and of different materials, i.e., of arbitrary penetration depth. We demonstrate that the asymmetry of the magnetic diffraction pattern, I-c(H-e), is ascribed to the different electrode inductances, for which we provide empirical expressions. We also generalize the modeling to the window-type junctions used nowadays and discuss how to take advantage of the asymmetric behavior in the realization of some superconducting devices. Further we report a systematic investigation of the diffraction patterns of in-line window-type junctions having a number of diverse geometrical configurations and made of dissimilar materials. The experimental results are found to be in agreement with the predictions and clearly demonstrate that the pattern asymmetry increases with the difference in the electrode inductances. (literal)
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