Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory (Articolo in rivista)

Type
Label
  • Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.87.165406 (literal)
Alternative label
  • Kristofer Reyes 1, Peter Smereka 1, Denis Nothern 2, Joanna Mirecki Millunchick 2, Sergio Bietti 3, Claudio Somaschini 3, Stefano Sanguinetti 3 and Cesare Frigeri 4 (2013)
    Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory
    in Physical review. B, Condensed matter (Online); The American Physical Society, College Park, MD 20740-3844 (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Kristofer Reyes 1, Peter Smereka 1, Denis Nothern 2, Joanna Mirecki Millunchick 2, Sergio Bietti 3, Claudio Somaschini 3, Stefano Sanguinetti 3 and Cesare Frigeri 4 (literal)
Pagina inizio
  • 165406-1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://prb.aps.org/pdf/PRB/v87/i16/e165406 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 87 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 14 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 16 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 Department of Mathematics, University of Michigan, Ann Arbor, Michigan 48109, USA; 2 Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA; 3 L-NESS, Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Milan, Italy; 4 IMEM-CNR, Parma, Italy (literal)
Titolo
  • Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory (literal)
Abstract
  • We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures observed during droplet epitaxy. The crucial features of the model include the explicit and independent representation of atoms with different species and the ability to treat solid and liquid phases independently. Using this model, we examine nanostructural evolution in droplet epitaxy. The model faithfully captures several of the experimentally observed structures, including compact islands and nanorings. Moreover, simulations showthe presence of Ga/GaAs core-shell structures that we validate experimentally.Afully analytical model of droplet epitaxy that explains the relationship between growth conditions and the resulting nanostructures is presented, yielding key insight into the mechanisms of droplet epitaxy. (literal)
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