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Synthesis of SiC on Si by seeded supersonic beams of fullerenes (Contributo in atti di convegno)

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Synthesis of SiC on Si by seeded supersonic beams of fullerenes (Contributo in atti di convegno) (literal)

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G. Ciullo a1, F. Biasioli a1, A. Podestá a2, P. Milani a2, T. Toccoli a1 and S. Iannotta a1 (2000)
Synthesis of SiC on Si by seeded supersonic beams of fullerenes
in Symposium L - Fundamental Mechanisms of Low-Energy-Beam Modified Surface - MRS Fall Meeting, Boston, MA, USA, Nov 09-Dec 02, 1999
(literal)

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G. Ciullo a1, F. Biasioli a1, A. Podestá a2, P. Milani a2, T. Toccoli a1 and S. Iannotta a1 (literal)

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Conference: Symposium on Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing held at the 1999 MRS Fall Meeting Location: BOSTON, MA Date: NOV 29-DEC 02, 1999 Sponsor(s): Mat Res Soc (literal)

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a1 CeFSA CNR-ITC Centro di Fisica degli Stati Aggregati, Via Sommarive 18, 38050 Povo di Trento (Italy) a2 INFM Dipartimento di Fisica, Via Celoria 16, 20133 Milano (Italy) (literal)

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E.H. Chason B.H. Cooper, J.M.E. Harper, S. Moss, R. Murti, T. Diaz de la Rubia (literal)

Abstract

A well characterized C-60 supersonic seeded beam has been used to synthesize SiC films on Si (111) 7x7, The control of beam parameters such as energy and flux distributions is shown to be important to improve quality of films in terms of morphology, defect density and structure. We demonstrate that a kinetic energy of a few eV of the C-60 precursor is enough to induce carbidization at moderate substrate temperature. Kinetic energy activated SiC formation at 750 degreesC is achieved with a strong reduction of the dimensions and density of defects. The films show a reduced roughness of about 2.5 nm (root mean square). (literal)

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