On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.tsf.2012.07.009 (literal)

Alternative label

• Jakomin R, Parisini A, Tarricone L, Longo M, Fraboni B, Vantaggio S (2012)
  On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy
  in Thin solid films (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Jakomin R, Parisini A, Tarricone L, Longo M, Fraboni B, Vantaggio S (literal)

Pagina inizio

• 6619 (literal)

Pagina fine

• 6625 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.sciencedirect.com/science/article/pii/S0040609012008589 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 520 (literal)

Rivista

• Thin solid films (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 21 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Univ Parma, Dipartimento Fis, CNISM, I-43100 Parma, Italy [ 2 ] Univ Bologna, Dipartimento Fis, I-40127 Bologna, Italy (literal)

Titolo

• On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy (literal)

Abstract

• The electrical properties of undoped and silicon doped InGaP layers grown lattice matched on GaAs by low pressure metal-organic vapor phase epitaxy were investigated under different growth conditions. The possible presence of superlattice ordering was excluded by photoluminescence analysis. Undoped layers exhibited a background p-type contamination of the order of 10(16) cm(-3); the role of possible carbon contamination is discussed. Capacitance-voltage and Hall investigation of Si-doped n-type layers evidenced a room temperature free electron density linearly increasing from 3.6x10(16) to 6x10(18) cm(-3) as a function of the Si precursor flow. The corresponding electron mobilities decreased from 1800 to 483 cm(2)/V s. At lower temperatures, the conductivity and mobility of the n-doped samples showed a metallic like behavior, in some cases with values not consistent with a simple electronic transport into the conduction band, suggesting the presence of an additional parallel transport channel. Five main electron traps were identified by deep level transient spectroscopy and among them, two traps resulted to be dominant, one turned out to play a major role in the bulk, probably associated to the Si doping, and the other was active near the InGaP surface, ascribable to P-related defects. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)

Autore CNR

• MASSIMO LONGO (Unità di personale interno)

Insieme di parole chiave

• Keywords of "On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• MASSIMO LONGO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Thin solid films (Rivista)

Insieme di parole chiave di

• Keywords of "On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy" (Insieme di parole chiave)