Near-Infrared All-Silicon Photodetectors (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Near-Infrared All-Silicon Photodetectors (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1155/2012/139278 (literal)

Alternative label

• Casalino M, Coppola G, Iodice M, Rendina I, Sirleto L (2012)
  Near-Infrared All-Silicon Photodetectors
  in International Journal of Photoenergy (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Casalino M, Coppola G, Iodice M, Rendina I, Sirleto L (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.hindawi.com/journals/ijp/2012/139278/ (literal)

Rivista

• International Journal of Photoenergy (Print) (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] CNR, Inst Microelect & Microsyst, I-80131 Naples, Italy (literal)

Titolo

• Near-Infrared All-Silicon Photodetectors (literal)

Abstract

• We report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their performance in terms of responsivity, free spectral range, and finesse was experimentally calculated in order to prove an enhancement in responsivity due to the cavity effect. Results show a responsivity peak of about 0.01 mA/W at 1550 nm with a reverse bias of 100 mV. The latter are constituted by a Schottky junction placed transversally to the optical field confined into the waveguide. Preliminary results show a responsivity of about 0.1 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behaviour in both C and L bands. Finally, an estimation of bandwidth for GHz range is deduced for both devices. The technological steps utilized to fabricate the devices allow an efficiently monolithic integration with complementary metal-oxide semiconductor (CMOS) compatible structures. (literal)

Prodotto di

• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• IVO RENDINA (Unità di personale interno)
• MARIO IODICE (Unità di personale interno)
• GIUSEPPE COPPOLA (Persona)
• MAURIZIO CASALINO (Unità di personale esterno)
• LUIGI SIRLETO (Persona)

Insieme di parole chiave

• Parole chiave di "Near-Infrared All-Silicon Photodetectors" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)

Autore CNR di

• MARIO IODICE (Unità di personale interno)
• MAURIZIO CASALINO (Unità di personale esterno)
• LUIGI SIRLETO (Persona)
• IVO RENDINA (Unità di personale interno)
• GIUSEPPE COPPOLA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• International Journal of Photoenergy (Print) (Rivista)

Insieme di parole chiave di

• Parole chiave di "Near-Infrared All-Silicon Photodetectors" (Insieme di parole chiave)