http://www.cnr.it/ontology/cnr/individuo/prodotto/ID2080

Fabrication of AlN/Si SAW delay lines with very low RF signal noise (Articolo in rivista)

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Fabrication of AlN/Si SAW delay lines with very low RF signal noise (Articolo in rivista) (literal)

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Ingrosso, I; Petroni, S; Altamura, D; De Vittorio, M; Combi, C; Passaseo, A (2007)
Fabrication of AlN/Si SAW delay lines with very low RF signal noise
in Microelectronic engineering
(literal)

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Ingrosso, I; Petroni, S; Altamura, D; De Vittorio, M; Combi, C; Passaseo, A (literal)

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Univ Lecce, CNR, Natl Nanotechnol Labs, INFM,ISUFI, I-73100 Lecce, Italy; STMicroelect, I-73100 Lecce, Italy; CNR, I-73100 Lecce, Italy (literal)

Titolo

Abstract

In this work we investigate the influence of the substrate resistivity and of different buffer layers on the out-of-band insertion losses in AIN SAW devices fabricated on (100) silicon substrates. The measurements have shown that the out-of-band insertion loss is improved by increasing the substrate resistivity but also by the introduction of an insulating buffer layer material. An out-of-band insertion loss as low as -75 dB has been achieved by the device realized on a silicon nitride buffer layer. This can be explained in terms of inhibition of the diffusion of silicon atoms in the AIN film. Our results show that silicon nitride represents a good solution in terms of low out-of-band insertion loss and cost effectiveness for the realization of nitride-based piezoelectric MEMS devices on silicon substrates. (c) 2007 Elsevier B.V. All rights reserved. (literal)

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