Optical conductivity of bismuth-based topological insulators (Articolo in rivista)

Type
Label
  • Optical conductivity of bismuth-based topological insulators (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.86.045439 (literal)
Alternative label
  • P. Di Pietro1, F. M. Vitucci1, D. Nicoletti2, L. Baldassarre3, P. Calvani1, R. Cava4, Y. S. Hor4, U. Schade5, and S. Lupi6 (2012)
    Optical conductivity of bismuth-based topological insulators
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • P. Di Pietro1, F. M. Vitucci1, D. Nicoletti2, L. Baldassarre3, P. Calvani1, R. Cava4, Y. S. Hor4, U. Schade5, and S. Lupi6 (literal)
Pagina inizio
  • 045439 (literal)
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  • http://link.aps.org/doi/10.1103/PhysRevB.86.045439 (literal)
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  • 86 (literal)
Rivista
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  • 5 (literal)
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  • 4 (literal)
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  • 1CNR-SPIN and Dipartimento di Fisica, Università di Roma \"La Sapienza,\" Piazzale A. Moro 2, Roma I-00185, Italy 2Max Planck Research Department for Structural Dynamics, Center for Free Electron Laser Science, University of Hamburg, Notkestrasse 85, Hamburg 22607, Germany 3Sincrotrone Trieste, Area Science Park, Trieste I-34012, Italy 4Department of Chemistry, Princeton University, New Jersey 08544, USA 5Berliner Elektronenspeicherring-Gesellshaft für Synchrotronstrahlung m.b.H., Albert-Einstein Strasse 15, Berlin, D-12489 Germany 6CNR-IOM and Dipartimento di Fisica, Università di Roma \"La Sapienza,\" Piazzale A. Moro 2, Roma I-00185, Italy (literal)
Titolo
  • Optical conductivity of bismuth-based topological insulators (literal)
Abstract
  • The optical conductivity ?1(?) and the spectral weight SW of four topological insulators with increasing chemical compensation (Bi2Se3, Bi2Se2Te, Bi2-xCaxSe3, and Bi2Te2Se) have been measured from 5 to 300 K and from subterahertz to visible frequencies. The effect of compensation is clearly observed in the infrared spectra through the suppression of an extrinsic Drude term and the appearance of strong absorption peaks that we assign to electronic transitions among localized states. From the far-infrared spectral weight SW of the most compensated sample (Bi2Te2Se), one can estimate a density of charge carriers on the order of 1017/cm3 in good agreement with transport data. Those results demonstrate that the low-energy electrodynamics in single crystals of topological insulators, even at the highest degree of compensation presently achieved, is still influenced by three-dimensional charge excitations. (literal)
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