http://www.cnr.it/ontology/cnr/individuo/prodotto/ID205006
Growth and characterization of buried GaSb p-n junctions for photovoltaic applications (Articolo in rivista)
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- Growth and characterization of buried GaSb p-n junctions for photovoltaic applications (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/crat.201000639 (literal)
- Alternative label
Baldini, Michele 1, Ghezzi, Carlo 1, Parisini, Antonella 1, Tarricone, Luciano 1, Vantaggio, Salvatore 1, Gombia, Enos 2, Motta, Alberto 2, Gasparotto, A. 3 (2011)
Growth and characterization of buried GaSb p-n junctions for photovoltaic applications
in Crystal Research and Technology; WILEY-BLACKWELL, MALDEN 02148,MA (Stati Uniti d'America)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Baldini, Michele 1, Ghezzi, Carlo 1, Parisini, Antonella 1, Tarricone, Luciano 1, Vantaggio, Salvatore 1, Gombia, Enos 2, Motta, Alberto 2, Gasparotto, A. 3 (literal)
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- Special Issue: Italien Crystal Growth Conference 2010 (ICG2010)
ID_PUMA: cnr.imem/2011-A0-056 (literal)
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- http://onlinelibrary.wiley.com/doi/10.1002/crat.201000639/abstract?systemMessage=Wiley+Online+Library+will+be+disrupted+on+23+February+from+10%3A00-12%3A00+BST+%2805%3A00-07%3A00+EDT%29+for+essential+maintenance (literal)
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- [ 1 ] Univ Parma, Dipartimento Fis, SEMLABS CNISM, I-43124 Parma, Italy; [ 2 ] IMEM CNR, I-43100 Parma, Italy; [ 3 ] Univ Padua, Dipartimento Fis, CNISM, I-35131 Padua, Italy (literal)
- Titolo
- Growth and characterization of buried GaSb p-n junctions for photovoltaic applications (literal)
- Abstract
- Structures composed of a p++(Zn)GaAs layer deposited by MOVPE on a n(Te)-doped GaSb substrate were fabricated, with the purpose of obtaining GaSb p-n homo-junctions, through the diffusion of Zn into the substrate, for photovoltaic applications. Different Zn doping levels and post-growth annealing parameters were investigated. The junctions were characterized from the electrical point of view by I-V measurements, while Zn diffusion profiles were studied by SIMS analysis. The effective achievement of a GaSb buried junction, whose profile is characterized by a limited Zn diffusion into the substrate, was evidenced. Efficiency measurements by a solar simulator on 5x5 mm2 samples were also performed in order to investigate the photovoltaic properties of the structure. (literal)
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