Growth and characterization of buried GaSb p-n junctions for photovoltaic applications (Articolo in rivista)

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  • Growth and characterization of buried GaSb p-n junctions for photovoltaic applications (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/crat.201000639 (literal)
Alternative label
  • Baldini, Michele 1, Ghezzi, Carlo 1, Parisini, Antonella 1, Tarricone, Luciano 1, Vantaggio, Salvatore 1, Gombia, Enos 2, Motta, Alberto 2, Gasparotto, A. 3 (2011)
    Growth and characterization of buried GaSb p-n junctions for photovoltaic applications
    in Crystal Research and Technology; WILEY-BLACKWELL, MALDEN 02148,MA (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Baldini, Michele 1, Ghezzi, Carlo 1, Parisini, Antonella 1, Tarricone, Luciano 1, Vantaggio, Salvatore 1, Gombia, Enos 2, Motta, Alberto 2, Gasparotto, A. 3 (literal)
Pagina inizio
  • 852 (literal)
Pagina fine
  • 856 (literal)
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  • Special Issue: Italien Crystal Growth Conference 2010 (ICG2010) ID_PUMA: cnr.imem/2011-A0-056 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://onlinelibrary.wiley.com/doi/10.1002/crat.201000639/abstract?systemMessage=Wiley+Online+Library+will+be+disrupted+on+23+February+from+10%3A00-12%3A00+BST+%2805%3A00-07%3A00+EDT%29+for+essential+maintenance (literal)
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  • 46 (literal)
Rivista
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  • 5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 8 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Univ Parma, Dipartimento Fis, SEMLABS CNISM, I-43124 Parma, Italy; [ 2 ] IMEM CNR, I-43100 Parma, Italy; [ 3 ] Univ Padua, Dipartimento Fis, CNISM, I-35131 Padua, Italy (literal)
Titolo
  • Growth and characterization of buried GaSb p-n junctions for photovoltaic applications (literal)
Abstract
  • Structures composed of a p++(Zn)GaAs layer deposited by MOVPE on a n(Te)-doped GaSb substrate were fabricated, with the purpose of obtaining GaSb p-n homo-junctions, through the diffusion of Zn into the substrate, for photovoltaic applications. Different Zn doping levels and post-growth annealing parameters were investigated. The junctions were characterized from the electrical point of view by I-V measurements, while Zn diffusion profiles were studied by SIMS analysis. The effective achievement of a GaSb buried junction, whose profile is characterized by a limited Zn diffusion into the substrate, was evidenced. Efficiency measurements by a solar simulator on 5x5 mm2 samples were also performed in order to investigate the photovoltaic properties of the structure. (literal)
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