Correlations between crystal defects and performance of CdZnTe detectors (Articolo in rivista)

Type
Label
  • Correlations between crystal defects and performance of CdZnTe detectors (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/TNS.2011.2160283 (literal)
Alternative label
  • Bolotnikov, A.E.; Babalola, S.; Camarda, G.S.; Cui, Y.; Gul, R.; Egarievwe, S.U.; Fochuk, P.M.; Fuerstnau, M.; Horace, J.; Hossain, A.; Jones, F.; Kim, K.H.; Kopach, O.V.; McCall, B.; Marchini, L.; Raghothamachar, B.; Taggart, R.; Yang, G.; Xu, L.; James, R.B. (2011)
    Correlations between crystal defects and performance of CdZnTe detectors
    in IEEE transactions on nuclear science; IEEE-Institute Of Electrical And Electronics Engineers Inc., Piscataway (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bolotnikov, A.E.; Babalola, S.; Camarda, G.S.; Cui, Y.; Gul, R.; Egarievwe, S.U.; Fochuk, P.M.; Fuerstnau, M.; Horace, J.; Hossain, A.; Jones, F.; Kim, K.H.; Kopach, O.V.; McCall, B.; Marchini, L.; Raghothamachar, B.; Taggart, R.; Yang, G.; Xu, L.; James, R.B. (literal)
Pagina inizio
  • 1972 (literal)
Pagina fine
  • 1980 (literal)
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  • ID_PUMA: cnr.imem/2011-A0-043 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5960003 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 58 (literal)
Rivista
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  • 9 (literal)
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  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Brookhaven Natl Lab, Upton, NY 11793 USA; [ 2 ] Alabama A&M Univ, Huntsville, AL 35762 USA; [ 3 ] Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine; [ 4 ] IMEM CNR, I-43124 Parma, Italy; [ 5 ] SUNY Stony Brook, Stony Brook, NY 11794 USA; [ 6 ] NW Polytech Univ, Xian 710072, Shaanxi, Peoples R China (literal)
Titolo
  • Correlations between crystal defects and performance of CdZnTe detectors (literal)
Abstract
  • Poor crystallinity remains a major problem affecting the availability and cost of CdZnTe (CZT) detectors. Point defects are responsible for small gradual charge loss and correlated with the electron clouds' drift times, which allows electronic correction of the output signals to achieve high spectral-resolution even with large-volume CZT detectors. In contrast, extended defects causes significant charge losses, which typically are uncorrelated, and, thus, result in much greater fluctuations of the output signals that cannot be corrected. Although extended defects do not affect all the interaction events, their fraction rapidly increases with the crystal's thickness and volume. In this paper, we summarize our recent results from testing CZT material and detectors that emphasize the particular roles of two types of extended defects, and their contributions to the device's overall performance. (literal)
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