\"Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires\" (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• \"Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires\" (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4758685 (literal)

Alternative label

• M. Felici, A. Polimeni, E. Tartaglini, A. Notargiacomo, M. Deluca, R. Carron, D. Fekete, B. Dwir, A. Rudra, M. capizzi, E. Kapon (2012)
  "Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires"
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Felici, A. Polimeni, E. Tartaglini, A. Notargiacomo, M. Deluca, R. Carron, D. Fekete, B. Dwir, A. Rudra, M. capizzi, E. Kapon (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 101 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy; CNR Ist Foton & Nanotecnol, I-00156 Rome, Italy; Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland; Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel (literal)

Titolo

• \"Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires\" (literal)

Abstract

• We investigated the effects of hydrogen irradiation on the degree of linear polarization, rho, of the light emitted by site-controlled, dilute-nitride InGaAsN V-groove quantum wires (QWRs). While in the as-grown sample the polarization of the QWR emission is highly sensitive to the increasing temperature (T), after sample hydrogenation the value of rho remains nearly unchanged (and similar to 25%) for T <= 220 K. This observation-potentially important for the development of devices based on the QWR polarization-points to a larger energy separation between hole subbands in the hydrogenated QWRs, due to the strain increase associated with the H-induced passivation of nitrogen. (literal)

Prodotto di

• Nanodispositivi a semiconduttore (MD.P06.001.001) (Modulo)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)

Autore CNR

• ANDREA NOTARGIACOMO (Persona)

Insieme di parole chiave

• Keywords of "\"Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires\"" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• Nanodispositivi a semiconduttore (MD.P06.001.001) (Modulo)

Autore CNR di

• ANDREA NOTARGIACOMO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Insieme di parole chiave di

• Keywords of "\"Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires\"" (Insieme di parole chiave)