http://www.cnr.it/ontology/cnr/individuo/prodotto/ID202515
\"Transmission electron microscopy study of Ni-Si nanocomposite films\" (Articolo in rivista)
- Type
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- \"Transmission electron microscopy study of Ni-Si nanocomposite films\" (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.mseb.2012.05.018 (literal)
- Alternative label
Md. Ahamad Mohiddon, M. Ghanashyam Krishna,G. Dalba, F. Rocca (2012)
"Transmission electron microscopy study of Ni-Si nanocomposite films"
in Materials science & engineering. B, Solid-state materials for advanced technology; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Md. Ahamad Mohiddon, M. Ghanashyam Krishna,G. Dalba, F. Rocca (literal)
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- http://www.sciencedirect.com/science/article/pii/S0921510712003194 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- Md. Ahamad Mohiddon, M. Ghanashyam Krishna ] School of Physics, University of Hyderabad, Hyderabad 500046, India:
[Dalba, Giuseppe] Department of Physics, University of Trento, 38123 POVO, Trento, Italy;
[Rocca, Francesco] IFN-CNR, Institute for Photonics and Nanotechnologies, Unit \"FBK-Photonics\" of Trento, 38123 POVO, Trento, Italy; (literal)
- Titolo
- \"Transmission electron microscopy study of Ni-Si nanocomposite films\" (literal)
- Abstract
- Nickel induced crystallization of amorphous Si (a-Si) films is investigated using transmission electron microscopy. Metal-induced crystallization was achieved on layered films deposited onto thermally oxidized Si(3 1 1) substrates by electron beam evaporation of a-Si (400 nm) over Ni (50 nm). The multi-layer stack was subjected to post-deposition annealing at 200 and 600 degrees C for 1 h after the deposition. Microstructural studies reveal the formation of nanosized grains separated by dendritic channels of 5 nm width and 400 nm length. Electron diffraction on selected points within these nanostructured regions shows the presence of face centered cubic NiSi2 and diamond cubic structured Si. Z-contrast scanning transmission electron microscopy images reveal that the crystallization of Si occurs at the interface between the grains of NiSi2 and a-Si. X-ray absorption fine structure spectroscopy analysis has been carried out to understand the nature of Ni in the Ni-Si nanocomposite film. The results of the present study indicate that the metal induced crystallization is due to the diffusion of Ni into the a-Si matrix, which then reacts to form nickel silicide at temperatures of the order of 600 degrees C leading to crystallization of a-Si at the silicide-silicon interface. (literal)
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