Strain Sensitivity and Transport Properties in Organic Field-Effect Transistors (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Strain Sensitivity and Transport Properties in Organic Field-Effect Transistors (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/LED.2011.2173898 (literal)

Alternative label

• Cosseddu, P; Milita, S; Bonfiglio, A (2012)
  Strain Sensitivity and Transport Properties in Organic Field-Effect Transistors
  in IEEE electron device letters (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Cosseddu, P; Milita, S; Bonfiglio, A (literal)

Pagina inizio

• 113 (literal)

Pagina fine

• 115 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 33 (literal)

Rivista

• IEEE electron device letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Cagliari, Dept Elect & Elect Engn, I-09123 Cagliari, Italy CNR, Natl Res Ctr, Inst Nanosci, I-41125 Modena, Italy CNR, Natl Res Ctr, Ist Microelettron & Microsistemi, I-40129 Bologna, Italy (literal)

Titolo

• Strain Sensitivity and Transport Properties in Organic Field-Effect Transistors (literal)

Abstract

• We present the electromechanical characterization of organic field-effect transistors (OFETs) fabricated with different organic semiconductors. Pentacene- and poly(3-hexylthiophene-2,5-diyl) (P3HT)-based OFETs have been investigated as strain sensors, and a clear correlation between the structural and morphological properties of the active layer with the device sensitivity has been observed. The highly disordered structure of polymeric films, as P3HT, confirmed by morphological and structural investigations, gives rise to a dramatic reduction of the device response to mechanical stimuli. Nevertheless, an unambiguous, fast, and reproducible response has been obtained also for this material, which, being solution processible, represents a valuable solution for the fabrication of low-cost pressure sensors for a variety of innovative applications. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanobiosistemi (MD.P06.010.002) (Modulo)

Autore CNR

• PIERO COSSEDDU (Unità di personale esterno)
• SILVIA MILITA (Persona)
• ANNALISA BONFIGLIO (Persona)

Incoming links:

Autore CNR di

• SILVIA MILITA (Persona)
• ANNALISA BONFIGLIO (Persona)
• PIERO COSSEDDU (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanobiosistemi (MD.P06.010.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• IEEE electron device letters (Rivista)