Observation of an electrically tunable band gap in trilayer graphene (Articolo in rivista)

Type
Label
  • Observation of an electrically tunable band gap in trilayer graphene (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1038/NPHYS2102 (literal)
Alternative label
  • Chun Hung Lui (1); Zhiqiang Li (1); Kin Fai Mak (1); Emmanuele Cappelluti (2,3); Tony F. Heinz (1) (2011)
    Observation of an electrically tunable band gap in trilayer graphene
    in Nature physics (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Chun Hung Lui (1); Zhiqiang Li (1); Kin Fai Mak (1); Emmanuele Cappelluti (2,3); Tony F. Heinz (1) (literal)
Pagina inizio
  • 944 (literal)
Pagina fine
  • 947 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.nature.com/nphys/journal/v7/n12/full/nphys2102.html (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 7 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
  • Google Scholar (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 Departments of Physics and Electrical Engineering, Columbia University, 538West 120th Street, New York, New York 10027, USA 2 Institute for Complex Systems (ISC), CNR, via dei Taurini 19, 00185 Rome, Italy 3 Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Cantoblanco, Madrid, Spain (literal)
Titolo
  • Observation of an electrically tunable band gap in trilayer graphene (literal)
Abstract
  • A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field(1-7). Thicker graphene layers are also highly attractive materials. The ability to produce a band gap in these systems is of great fundamental and practical interest. Both experimental(8) and theoretical(9-16) investigations of graphene trilayers with the typical ABA layer stacking have, however, revealed the lack of any appreciable induced gap. Here we contrast this behaviour with that exhibited by graphene trilayers with ABC crystallographic stacking. The symmetry of this structure is similar to that of AB-stacked graphene bilayers and, as shown by infrared conductivity measurements, permits a large band gap to be formed by an applied electric field. Our results demonstrate the critical and hitherto neglected role of the crystallographic stacking sequence on the induction of a band gap in few-layer graphene. (literal)
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