GaAs single photon emitters at liquid nitrogen temperature grown by droplet epitaxy on Si substrate (Abstract/Poster in atti di convegno)

Type
Label
  • GaAs single photon emitters at liquid nitrogen temperature grown by droplet epitaxy on Si substrate (Abstract/Poster in atti di convegno) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Alternative label
  • SERGIO BIETTI', LUCIA CAVIGLI2, MARCO ABBARCHI2, JACOPO FRiGERio3, GIOVANNI IsELLA3, CESARE FRiGERi4, ANNA ViNATTiERi2, MASSIMO GuRiOLi2, and STEFANO SANGUINETTI (2012)
    GaAs single photon emitters at liquid nitrogen temperature grown by droplet epitaxy on Si substrate
    in ICPS 2012, 31st International Conference on the Physics of Semiconductors, Zürich (CH),, July 29 - August 3, 2012
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • SERGIO BIETTI', LUCIA CAVIGLI2, MARCO ABBARCHI2, JACOPO FRiGERio3, GIOVANNI IsELLA3, CESARE FRiGERi4, ANNA ViNATTiERi2, MASSIMO GuRiOLi2, and STEFANO SANGUINETTI (literal)
Pagina inizio
  • 36 (literal)
Pagina fine
  • 36 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 1 (literal)
Note
  • Abstract (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 Dipartimento di Scienza dei Materiali and L-NESS, Università di Milano Bicocca, Via Cozzi 53,1-20125 Milano, Italy 2 Dipartimento di Fisica e Astronomia, LENS and CNISM, Università di Firenze, Via Sansone 1, 1-50019 Firenze, Italy 3 Dipartimento di Fisica and L-NESS, Politecnico di Milano, Via Anzani 42,1-22100 Como, Italy 4 CNR-IMEM Institute, Parco Area delle Scienze 37/A, 1-43100 Parma, Italy (literal)
Titolo
  • GaAs single photon emitters at liquid nitrogen temperature grown by droplet epitaxy on Si substrate (literal)
Abstract
  • The integration of III-V nanostructures on Silicon would allow to combine thè high performance of quantum photonic devices and of CMOS circuitry on Si. In this work, we present thè first demonstration of single photon emission from high quality GaAs quantum dots (QDs) grown by droplet epitaxy on Si substrates using a thin Gè buffer layer deposited by Low Energy Plasma Enhanced Chemical Vapour Deposition (LEPECVD). Droplet epitaxy allows for thè separate control of thè QD size and density, and provides thè possibility to fabricate different classes of quantum nanostructures with tailored wavefunctions and electronic levels. Droplet epitaxy is also an intrinsically low thermal budget growth, being performed at temperatures between 200 and 350 °C. This makes droplet epitaxy perfectly suited for thè realization of growth procedures compatible with back-end integration of III-V nanostructures on CMOS. The deposition of a thin Gè layer by LEPECVD allows for thè reduction of threading dislocation density down to few IO7 cm~2. GaAs QDs with a density of few IO8 cm~2 and a mean height of 8 nm are fabricated by droplet epitaxy inside a A10 3oGa0 yoAs barrier. Two annealing procedure are performed, thè first one in chamber right after thè quantum dots growth to desorb As excess while thè second one (performed in a rapid thermal annealing System) improves crystal quality. Brighi and sharp emission lines are observed in a micro-photoluminescence experiment around 700 nm, with pure radiative excitonic lifetime and clear evidence of exciton-biexciton cascade. The achievement of quantum photon statistics is directly proved by antibunching in thè second order correlation function as measured with a Hanbury Brown and Twiss interferometer up to T=80 K, thus making thè single photon emitter working at liquid nitrogen temperature and compatible with present CMOS technology. The optical quality of thè GaAs quantum dots grown on Si substrate is almost comparable with quantum dots directly grown on GaAs substrates, clearly demonstrating a new procedure for thè integration of high efficient light emitters, based on III-V semiconductors, directly on Si substrates, and opening thè route to wide applications to optoelectronics, photonics and quantum information technology. (literal)
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