New silicon SPAD technology for enhanced redsensitivity, high-resolution timing and system integration (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• New silicon SPAD technology for enhanced redsensitivity, high-resolution timing and system integration (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1117/12.919120 (literal)

Alternative label

• A. Gulinatti, I. Rech a , F. Panzeri , C. Cammi, P. Maccagnani, M. Ghioni & S. Cova (2012)
  New silicon SPAD technology for enhanced redsensitivity, high-resolution timing and system integration
  in Journal of modern optics (Online); Taylor & Francis Group, London (Regno Unito)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. Gulinatti, I. Rech a , F. Panzeri , C. Cammi, P. Maccagnani, M. Ghioni & S. Cova (literal)

Pagina inizio

• 1489 (literal)

Pagina fine

• 1499 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.tandfonline.com/doi/abs/10.1080/09500340.2012.701340 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 59 (literal)

Rivista

• Journal of modern optics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 11 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 17 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milano, Italy IMM-CNR sez. Bologna, Bologna, Italy Micro Photon Devices (MPD), Bolzano, Italy (literal)

Titolo

• New silicon SPAD technology for enhanced redsensitivity, high-resolution timing and system integration (literal)

Abstract

• In this paper we present a new technology for the fabrication of Single Photon Avalanche Diodes (SPADs) aimed at combining the advantages of thin and thick SPADs. The new detector is manufactured in a thick epitaxial layer designed to improve the Photon Detection Efficiency (PDE) in the red and near-infrared range while maintaining a good timing resolution. Experimental characterization of the new red-enhanced SPAD (RE-SPAD) confirmed a significant improvement of the PDE compared with thin SPADs; for example the PDE at a wavelength of 800nm has increased from 15% to about 40%. Nevertheless the temporal resolution is still good, with a timing jitter of about 90 ps FWHM. In the same operating conditions the dark count rate is comparable with the one attainable with a thin SPAD (e.g. less than 25 cps for a 50 mm diameter device cooled down to ?5?C). Moreover, being planar, the new technology is compatible with the fabrication of arrays of detectors. (literal)

Editore

• Taylor & Francis Group (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di tecnologie e realizzazione di dispositivi e microsistemi fotonici, fluidici e meccanici (MD.P05.011.001) (Modulo)

Autore CNR

• PIERA MACCAGNANI (Persona)

Insieme di parole chiave

• Parole chiave di "New silicon SPAD technology for enhanced redsensitivity, high-resolution timing and system integration" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di tecnologie e realizzazione di dispositivi e microsistemi fotonici, fluidici e meccanici (MD.P05.011.001) (Modulo)

Autore CNR di

• PIERA MACCAGNANI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of modern optics (Rivista)

Editore di

• Taylor & Francis Group (Editore)

Insieme di parole chiave di

• Parole chiave di "New silicon SPAD technology for enhanced redsensitivity, high-resolution timing and system integration" (Insieme di parole chiave)