The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.4028/www.scientific.net/MSF.711.22 (literal)

Alternative label

• Attolini, G 1; Bosi, M 1; Watts, BE 1; Battistig, G 2; Dobos, L 2; Pecz, B 2 (2012)
  The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers
  in Materials science forum; Trans Tech Publications Ltd., Stafa-Zurich (Swaziland)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Attolini, G 1; Bosi, M 1; Watts, BE 1; Battistig, G 2; Dobos, L 2; Pecz, B 2 (literal)

Pagina inizio

• 22 (literal)

Pagina fine

• 26 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011) Location: Tours, FRANCE Date: JUN 27-30, 2011 Sponsor(s): Mersen; ST; Dow Corning; Plassys; CREE; Novasic; Soitec; Agilent Technol; Centrotherm; Corial; Fogale Nanotech; Polytec; OMMIC; AIXTRON; Bruker; Oxford Instruments; IBS; Polytech Tours; IUT; TOURS; Tours Plus; Reg Ctr; Univ Francois Rabelais Tours; S2E2 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 711 (literal)

Rivista

• Materials science forum (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. IMEM CNR, Inst Parco Area Sci 37 A, I-43010 Parma, Italy; 2. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Budapest, Hungary (literal)

Titolo

• The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers (literal)

Abstract

• In this work we report on the growth of cubic silicon carbide using CBr4 and silane as precursors at different C3H8/CBr4 flow ratios. The layers were deposited on 2 '' (001) Si wafers by means of the VPE technique in a horizontal cold-wall reactor with induction heating. The growths were performed at atmospheric pressure, in H-2 atmosphere and involved several steps: Si thermal etching; carburisation; epitaxial growth. Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were performed to observe the film morphology and defects and correlate them with the gas phase composition. Results show that the addition of CBr4 to the standard SiH4 and C3H8 precursor can change the crystalline nature and the morphology of the grown SiC. (literal)

Editore

• Trans Tech Publications Ltd. (Editore)

Prodotto di

• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)
• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Autore CNR

• MATTEO BOSI (Persona)
• GIOVANNI ATTOLINI (Unità di personale interno)
• BERNARD ENRICO WATTS (Unità di personale interno)

Insieme di parole chiave

• Keywords of "The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)

Autore CNR di

• BERNARD ENRICO WATTS (Unità di personale interno)
• GIOVANNI ATTOLINI (Unità di personale interno)
• MATTEO BOSI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)

Editore di

• Trans Tech Publications Ltd. (Editore)

Insieme di parole chiave di

• Keywords of "The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers" (Insieme di parole chiave)