Conduction band offset of HfO2 on GaAs (Articolo in rivista)

Type
Label
  • Conduction band offset of HfO2 on GaAs (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2805811 (literal)
Alternative label
  • Seguini, G; Perego, M; Spiga, S; Fanciulli, M; Dimoulas, A (2007)
    Conduction band offset of HfO2 on GaAs
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Seguini, G; Perego, M; Spiga, S; Fanciulli, M; Dimoulas, A (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 91 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR INFM, MDM Natl Lab, I-20041 Milan, Italy; Demokritos Natl Ctr Sci Res, Inst Mat Sci, MBE Lab, GR-15310 Athens, Greece (literal)
Titolo
  • Conduction band offset of HfO2 on GaAs (literal)
Abstract
  • A detailed analysis of the band alignment between molecular beam deposited amorphous HfO2 and GaAs is reported. The conduction band offset, measured by internal photoemission (IPE), is 1.9 +/- 0.2 eV. The valence band offset (VBO) is probed by x-ray photoelectron spectroscopy (XPS). The accurate determination of the VBO requires a careful evaluation of differential charging phenomena and consequently a proper correction of the energy scale. The measured VBO value is 2.1 +/- 0.1 eV. Since the HfO2 gap is 5.6 eV, as detected by photoconductivity analysis, the results obtained by IPE and XPS are in excellent agreement. (literal)
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