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Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates (Articolo in rivista)

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Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates (Articolo in rivista) (literal)

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Watts, Bernard E. 1, Attolini, Giovanni 1, Besagni, Tullo 1, Bosi, Matteo 1, Ferrari, Claudio 1, Rossi, Francesca 1, Riesz, Ferenc 2, Jiang, Liudi 2 (2011)
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates
in Materials science forum; Trans Tech Publications Ltd., Stafa-Zurich (Swaziland)
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Watts, Bernard E. 1, Attolini, Giovanni 1, Besagni, Tullo 1, Bosi, Matteo 1, Ferrari, Claudio 1, Rossi, Francesca 1, Riesz, Ferenc 2, Jiang, Liudi 2 (literal)

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8th European Conference on Silicon Carbide and Related Materials Location: Sundvolden Conf Ctr, Oslo, NORWAY Date: AUG 29-SEP 02, 2010 Sponsor(s): Aixtron; Dow Corning; Birkeland Innovation; Centrotherm; CREE Inc; Gen Elect; LPE; Norden NordForsk; SiCED; SiCrystal AG; Res Council Norway; Univ Oslo ID_PUMA: cnr.imem/2011-A0-039 (literal)

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IMEM-CNR Institute, Parco Area delle Scienze 37A. 43124 Parma, Italy; Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O. Box 49, H-1525 Budapest, Hungary; School of Engineering Sciences, University of Southampton, Highfield, Southampton, SO17 1BJ, United Kingdom (literal)

Titolo

Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates (literal)

Abstract

To assess deformation issues in SiC/Si, different pre-growth procedures were investigated, involving the addition of SiH4 to C3H8 during the temperature ramps used for the carbonization. 3C-SiC layers were deposited on (001) and (111) Si substrates by VPE. The mechanical deformation of the wafer was measured by makyoh, obtaining 2D maps of the entire wafers. For the same pre-growth procedures, the substrate curvature depends strongly on the orientation of the substrate, (001) or (111), being generally lower for (111) substrates. The deformation results were compared with XRD and Raman spectroscopy. Plastic deformation of the substrate was evidenced by XRD, while the presence of tensile stress is suggested by Raman analysis. (literal)

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