http://www.cnr.it/ontology/cnr/individuo/prodotto/ID194070
High dose P+ implanted 4H-SiC: microwave and conventional post implantation annealing at temperatures > 1700C (Articolo in rivista)
- Type
- Label
- High dose P+ implanted 4H-SiC: microwave and conventional post implantation annealing at temperatures > 1700C (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Alternative label
A. Nath, Mulpuri V. rao, A. Carnera, C. Albonetti, S.B. Qadri, Y-L Tian, R. Nipoti (2012)
High dose P+ implanted 4H-SiC: microwave and conventional post implantation annealing at temperatures > 1700C
in KIEEME Journal of Electrical and Electronic Materials
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- A. Nath, Mulpuri V. rao, A. Carnera, C. Albonetti, S.B. Qadri, Y-L Tian, R. Nipoti (literal)
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Titolo
- High dose P+ implanted 4H-SiC: microwave and conventional post implantation annealing at temperatures > 1700C (literal)
- Prodotto di
- Autore CNR
Incoming links:
- Prodotto
- Autore CNR di
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi