High dose P+ implanted 4H-SiC: microwave and conventional post implantation annealing at temperatures > 1700C (Articolo in rivista)

Type
Label
  • High dose P+ implanted 4H-SiC: microwave and conventional post implantation annealing at temperatures > 1700C (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Alternative label
  • A. Nath, Mulpuri V. rao, A. Carnera, C. Albonetti, S.B. Qadri, Y-L Tian, R. Nipoti (2012)
    High dose P+ implanted 4H-SiC: microwave and conventional post implantation annealing at temperatures > 1700C
    in KIEEME Journal of Electrical and Electronic Materials
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A. Nath, Mulpuri V. rao, A. Carnera, C. Albonetti, S.B. Qadri, Y-L Tian, R. Nipoti (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR - ISMN (literal)
Titolo
  • High dose P+ implanted 4H-SiC: microwave and conventional post implantation annealing at temperatures > 1700C (literal)
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Autore CNR

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