Evaluation of a novolak based positive tone photoresist as NanoImprint Lithography resist (Articolo in rivista)

Type
Label
  • Evaluation of a novolak based positive tone photoresist as NanoImprint Lithography resist (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.mee.2011.01.018 (literal)
Alternative label
  • Pozzato, A., Grenci, G., Birarda, G., Tormen, M. (2011)
    Evaluation of a novolak based positive tone photoresist as NanoImprint Lithography resist
    in Microelectronic engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Pozzato, A., Grenci, G., Birarda, G., Tormen, M. (literal)
Pagina inizio
  • 2096 (literal)
Pagina fine
  • 2099 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 88 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IOM-CNR, Laboratorio TASC Area Science Park, S.S.14, Km 163.5, Basovizza, 34012 Trieste, Italy Elettra Synchrotron Light Laboratory, S.S.14 Km 163.5, Basovizza, 34012 Trieste, Italy University of Trieste, PhD Nanotechnology, P.le Europa 1, I-34127 Trieste, Italy ThunderNil S.r.l., Via Ugo Foscolo 8, I-35131 Padova, Italy (literal)
Titolo
  • Evaluation of a novolak based positive tone photoresist as NanoImprint Lithography resist (literal)
Abstract
  • Motivated by the high etch selectivity obtained with novolak based UV photoresists masks in the pattern transfer to silicon, we have studied the conditions under which a novolak photoresist may be also patterned by NanoImprint Lithography (NIL). The present study is specifically carried out on MICROPOSIT S1800, for which we have identified a suitable NIL process window. The overall quality of the produced nanopatterns depends strongly on the thermal history of the photoresist film. In particular, residuals of solvent in the film are essential to obtain thin residual layers and to avoid cracks during stamp separation, which otherwise easily occur in fully dried material owing to an increase of brittleness. Infrared spectroscopy is applied to determine the relative amount of solvent for different processes and to correlate it to the optimal imprinting conditions. Finally, high-aspect-ratio pattern transfer has been demonstrated in an Inductively Coupled Plasma (ICP) etching system using NIL nanopatterned S1800 resist as a mask. © 2011 Elsevier B.V. All rights reserved. (literal)
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