Curvature effects on valley splitting and degeneracy lifting: The case of Si/Ge rolled-up nanotubes (Articolo in rivista)

Type
Label
  • Curvature effects on valley splitting and degeneracy lifting: The case of Si/Ge rolled-up nanotubes (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.85.075308 (literal)
Alternative label
  • Giovanni Pizzi (1,2), Michele Virgilio (2,3), Giuseppe Grosso (2,3), Suwit Kiravittaya (4), and Oliver G. Schmidt (4) (2012)
    Curvature effects on valley splitting and degeneracy lifting: The case of Si/Ge rolled-up nanotubes
    in Physical review. B, Condensed matter and materials physics; The American Physical Society, Ridge, NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giovanni Pizzi (1,2), Michele Virgilio (2,3), Giuseppe Grosso (2,3), Suwit Kiravittaya (4), and Oliver G. Schmidt (4) (literal)
Pagina inizio
  • 075308 (literal)
Pagina fine
  • 075314 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://link.aps.org/doi/10.1103/PhysRevB.85.075308 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 85 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 7 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1Scuola Normale Superiore, Piazza dei Cavalieri 7, I-56126 Pisa, Italy 2NEST, Istituto Nanoscienze-CNR, Piazza San Silvestro 12, I-56127 Pisa, Italy 3Dipartimento di Fisica \"E. Fermi,\" Università di Pisa, Largo Pontecorvo 3, I-56127, Pisa, Italy 4Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany (literal)
Titolo
  • Curvature effects on valley splitting and degeneracy lifting: The case of Si/Ge rolled-up nanotubes (literal)
Abstract
  • We numerically investigate electronic states, degeneracy lifting, and valley splitting in the conduction band of rolled-up Si/Ge nanotubes. Results are derived from a tight-binding model where the input equilibrium positions of the atoms are obtained by means of continuum elasticity theory. We find three inequivalent ? valleys. The lifting of their energy degeneracy and the spatial distribution of the corresponding states are interpreted in terms of nonbiaxial strain and confinement effects. The intervalley interaction in Si/Ge nanotubes is studied as a function of the thickness and curvature of the tube. We demonstrate that the curvature affects the intervalley interaction, in close analogy to what happens with the application of a perpendicular electric field in planar quantum well Si/Ge systems. (literal)
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