Improved performances of 1.3 mu m InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition (Articolo in rivista)

Type
Label
  • Improved performances of 1.3 mu m InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • Tasco V, Poti B, De Vittorio M, De Giorgi A, Cingolani R, Passaseo A (2005)
    Improved performances of 1.3 mu m InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition
    in Microelectronics journal
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Tasco V, Poti B, De Vittorio M, De Giorgi A, Cingolani R, Passaseo A (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 36 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-NANO (literal)
Titolo
  • Improved performances of 1.3 mu m InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition (literal)
Abstract
  • We present InGaAs quantum dots (QDs) grown by metal organic chemical vapour deposition in which, by increasing the growth temperature (from 550 up to 610 degrees C), a high emission efficiency beyond 1.3 mu m and narrow linewidth (down to 22 meV at room temperature) can be preserved, with a relevant decrease of defect density. The possibility to grow QDs at higher temperature, close to the cladding growth temperature, allows a strong reduction of the annealing effect when the QDs are inserted in device structures. The spectral blue shift, consequence of this effect, is reduced of 90% in QDs grown at 590 degrees C, with respect to those grown at 550 degrees C, thus providing electroluminescence emission near 1.3 mu m. (literal)
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