AlN-based MEMS devices for vibrational Energy harvesting applications (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• AlN-based MEMS devices for vibrational Energy harvesting applications (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/ESSDERC.2011.6044220 (literal)

Alternative label

• A. Bertacchini, S. Scorcioni, D. Dondi, L. Larcher, P. Pavan, M.T. Todaro, A. Campa, G. Caretto, S. Petroni, A. Passaseo, M. De Vittorio (2011)
  AlN-based MEMS devices for vibrational Energy harvesting applications
  in Proceedings of the European Solid State Device Research Conference
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. Bertacchini, S. Scorcioni, D. Dondi, L. Larcher, P. Pavan, M.T. Todaro, A. Campa, G. Caretto, S. Petroni, A. Passaseo, M. De Vittorio (literal)

Pagina inizio

• 119 (literal)

Pagina fine

• 122 (literal)

Rivista

• Proceedings of the European Solid State Device Research Conference (Rivista)

Note

• Scopus (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [A. Bertacchini, S. Scorcioni, D. Dondi, L. Larcher] DISMI - University of Modena and Reggio Emilia, Italy [P. Pavan] DII - University of Modena and Reggio Emilia, Italy [ M.T. Todaro, A. Campa, G. Caretto, A. Passaseo, M. De Vittorio] NNL, Istituto Nanoscienze-CNR, Lecce, Italy [S. Petroni, M. De Vittorio] Istituto Italiano di Tecnologia CBN-IIT, Arnesano (LE), Italy [M. De Vittorio] Dip.Ing.Innovazione - Università del Salento Lecce, Italy (literal)

Titolo

• AlN-based MEMS devices for vibrational Energy harvesting applications (literal)

Abstract

• This paper presents a new AlN-based MEMS devices suitable for vibrational energy harvesting applications. Due to their particular shape and unlike traditional cantilever which efficiently harvest energy only if subjected to stimulus in the proper direction, the proposed devices have 3D generation capabilities solving the problem of device orientation and placement in real applications. Thanks to their particular shape, the realized devices present more than one fundamental resonance frequencies in a range comprised between 500 Hz and 1.5 kHz, with a voltage generation higher than 300?V and an output power up to 0.4 pW for single MEMS device. (literal)

Autore CNR

• ADRIANA GRAZIA PASSASEO (Persona)
• MARIA TERESA TODARO (Persona)
• MASSIMO DE VITTORIO (Persona)

Incoming links:

Autore CNR di

• ADRIANA GRAZIA PASSASEO (Persona)
• MARIA TERESA TODARO (Persona)
• MASSIMO DE VITTORIO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Proceedings of the European Solid State Device Research Conference (Rivista)