Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4752437 (literal)

Alternative label

• R. Mao, B. D. Kong, K. W. Kim, T. Jayasekera, A. Calzolari, and M. Buongiorno Nardelli (2012)
  Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions
  in Applied physics letters; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• R. Mao, B. D. Kong, K. W. Kim, T. Jayasekera, A. Calzolari, and M. Buongiorno Nardelli (literal)

Pagina inizio

• 113111 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://apl.aip.org/resource/1/applab/v101/i11/p113111_s1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 101 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 11 (literal)

Note

• ISI Web of Science (WOS) (literal)
• Google Scholar (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911, USA; Department of Physics, Southern Illinois University, Carbondale, Illinois 62901, USA; Istituto Nanoscienze CNR-NANO-S3, I-41100 Modena, Italy; Department of Physics and Department of Chemistry, University of North Texas, Denton, Texas 76203, USA and CSMD, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA (literal)

Titolo

• Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions (literal)

Abstract

• Using calculations from first principles and the Landauer approach for phonon transport, we study the Kapitza resistance in selected multilayer graphene/dielectric heterojunctions (hexagonal BN and wurtzite SiC) and demonstrate (i) the resistance variability (?50 ? 700 ? 10?10 m2K=W) induced by vertical coupling, dimensionality, and atomistic structure of the system and (ii) the ability of understanding the intensity of the thermal transmittance in terms of the phonon distribution at the interface. Our results pave the way to the fundamental understanding of active phonon engineering by microscopic geometry design. (literal)

Editore

• American Institute Of Physics (AIP) (Editore)

Prodotto di

• Teoria e simulazione di materiali nanostrutturati (MD.P06.012.003) (Modulo)

Autore CNR

• ARRIGO CALZOLARI (Persona)

Insieme di parole chiave

• Parole chiave di "Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions" (Insieme di parole chiave)

Incoming links:

Prodotto

• Teoria e simulazione di materiali nanostrutturati (MD.P06.012.003) (Modulo)

Autore CNR di

• ARRIGO CALZOLARI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Editore di

• American Institute Of Physics (AIP) (Editore)

Insieme di parole chiave di

• Parole chiave di "Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions" (Insieme di parole chiave)