Epitaxial Growth of Hexagonal Boron Nitride on Ir(111) (Articolo in rivista)

Type
Label
  • Epitaxial Growth of Hexagonal Boron Nitride on Ir(111) (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1021/jp207571n (literal)
Alternative label
  • Fabrizio Orlando (1,2); Rosanna Larciprete (3); Paolo Lacovig (4); Ilan Boscarat (5); Alessandro Baraldi (1,2); Silvano Lizzit (4) (2012)
    Epitaxial Growth of Hexagonal Boron Nitride on Ir(111)
    in Journal of physical chemistry. C; ACS, American chemical society, Washington, DC (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Fabrizio Orlando (1,2); Rosanna Larciprete (3); Paolo Lacovig (4); Ilan Boscarat (5); Alessandro Baraldi (1,2); Silvano Lizzit (4) (literal)
Pagina inizio
  • 157 (literal)
Pagina fine
  • 164 (literal)
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  • http://pubs.acs.org/doi/abs/10.1021/jp207571n (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 116 (literal)
Rivista
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  • 8 (literal)
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  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 Physics Department and Center of Excellence for Nanostructured Materials, University of Trieste, Via A. Valerio 2, 34127 Trieste, Italy 2 IOM-CNR, Laboratorio TASC, AREA Science Park, S.S. 14 Km 163.5, 34149 Trieste, Italy 3 CNR-ISC, Via Fosso del Cavaliere 100, 00133 Roma, Italy 4 Sincrotrone Trieste S.C.p.A., AREA Science Park, S.S. 14 Km 163.5, 34149 Trieste, Italy 5 Department of Chemical Sciences, University of Trieste, Via A. Valerio 2, 34127 Trieste, Italy (literal)
Titolo
  • Epitaxial Growth of Hexagonal Boron Nitride on Ir(111) (literal)
Abstract
  • The formation of a hexagonal boron nitride (h-BN) layer through dissociation of borazine (B 3N 3H 6) molecules on Ir(111) has been investigated by a combination of X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure, temperature-programmed desorption, and low-energy electron diffraction. At low temperature (T = 170 K), molecular borazine adsorption occurs with the plane of the benzene-like ring parallel to the substrate. Dehydrogenation is observed at temperatures higher than 250 K and extends up to 900 K, with a maximum H 2 desorption rate around 300 K. Besides dehydrogenation, room temperature adsorption of borazine leads to the formation of atomic and molecular fragments due to the break-up of part of the BN bonds. The epitaxial growth of h-BN starts at temperature higher than 1000 K where an extended and long-range ordered layer is obtained. The presence of a corrugation in the h-BN layer with moiré periodicity of (13 × 13)/(12 × 12) BN/Ir unit cell is reflected in the double component structure of the B 1s and N 1s core level spectra. (literal)
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