Dynamic probe of atom exchange during monolayer growth (Articolo in rivista)

Type
Label
  • Dynamic probe of atom exchange during monolayer growth (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.85.201416 (literal)
Alternative label
  • Moutanabbir, O; Ratto, F; Heun, S; Scheerschmidt, K; Locatelli, A; Rosei, F (2012)
    Dynamic probe of atom exchange during monolayer growth
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Moutanabbir, O; Ratto, F; Heun, S; Scheerschmidt, K; Locatelli, A; Rosei, F (literal)
Pagina inizio
  • 201416 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 85 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 20 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Ecole Polytech, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada 2. Max Planck Inst Microstruct Phys, D-06120 Halle, Saale, Germany 3. Keio Univ, Sch Fundamental Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan 4. Consiglio Nazl Ric CNR IFAC, Ist Fis Applicata, I-50019 Sesto Fiorentino, Italy 5. Ist Nanosci CNR, NEST, I-56127 Pisa, Italy 6. Scuola Normale Super Pisa, I-56127 Pisa, Italy 7. Elettra Sincrotrone Trieste SCpA, I-34149 Trieste, Italy 8. Univ Quebec, INRS EMT, Varennes, PQ J3X 1S2, Canada (literal)
Titolo
  • Dynamic probe of atom exchange during monolayer growth (literal)
Abstract
  • In heteroepitaxy, impinging beam atoms can either wet the surface or swap with substrate atoms. Herein, we present a dynamic study of these phenomena throughout the assembly of the first atomic layer of Ge on Si(111). In situ spectromicroscopic analysis demonstrates that, at a sufficiently high temperature, atom exchange is more significant at the early stages of growth and attenuates as deposition proceeds. Our result highlights the role of propagating monolayer edges in the entropy-driven atom swapping and demonstrates that substitution of Si by Ge is a low-energy pathway to incorporate Ge in the growing monolayer. These observations are confirmed by molecular dynamic simulations. (literal)
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