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Second-harmonic generation in silicon waveguides strained by silicon nitride (Articolo in rivista)

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Second-harmonic generation in silicon waveguides strained by silicon nitride (Articolo in rivista) (literal)

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Cazzanelli M, F. Bianco, E. Borga, G. Pucker, M. Ghulinyan, E. Degoli, E. Luppi, V. Véniard, S. Ossicini, D. Modotto, S. Wabnitz, R. Pierobon, L. Pavesi (2012)
Second-harmonic generation in silicon waveguides strained by silicon nitride
in Nature materials (Print); NATURE PUBLISHING GROUP,, LONDON (Regno Unito)
(literal)

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Cazzanelli M, F. Bianco, E. Borga, G. Pucker, M. Ghulinyan, E. Degoli, E. Luppi, V. Véniard, S. Ossicini, D. Modotto, S. Wabnitz, R. Pierobon, L. Pavesi (literal)

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Nanoscience Laboratory, Department of Physics, University of Trento, via Sommarive 14, 38123 Povo, Trento, Italy M. Cazzanelli, F. Bianco, E. Borga & L. Pavesi Advanced Photonics & Photovoltaics Unit, Bruno Kessler Foundation, via Sommarive 18, 38123 Povo, Trento, Italy G. Pucker & M. Ghulinyan Istituto di Nanoscienze-CNR-S3 and Dipartimento di Scienze e Metodi dell'Ingegneria, Università di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42122 Reggio Emilia, Italy E. Degoli & S. Ossicini Department of Chemistry, University of California Berkeley, California 94720, USA E. Luppi Laboratoire des Solides Irradiés, Ecole Polytechnique, Route de Saclay, F-91128 Palaiseau and European Theoretical Spectroscopy Facility (ETSF), France V. Véniard Department of Information Engineering, University of Brescia, via Branze 38, 25123 Brescia, Italy D. Modotto & S. Wabnitz CIVEN, via delle Industrie 5, I-30175, Venezia Marghera, Italy R. Pierobon (literal)

Titolo

Second-harmonic generation in silicon waveguides strained by silicon nitride (literal)

Abstract

Silicon photonics meets the electronics requirement of increased speed and bandwidth with on-chip optical networks. All-optical data management requires nonlinear silicon photonics. In silicon only third-order optical nonlinearities are present owing to its crystalline inversion symmetry. Introducing a second-order nonlinearity into silicon photonics by proper material engineering would be highly desirable. It would enable devices for wideband wavelength conversion operating at relatively low optical powers. Here we show that a sizeable second-order nonlinearity at optical wavelengths is induced in a silicon waveguide by using a stressing silicon nitride overlayer. We carried out second-harmonic-generation experiments and first-principle calculations, which both yield large values of strain-induced bulk second-order nonlinear susceptibility, up to 40 pm V-1 at 2,300 nm. We envisage that nonlinear strained silicon could provide a competing platform for a new class of integrated light sources spanning the near-to mid-infrared spectrum from 1.2 to 10 mu m. (literal)

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