Location of the minimum of the differential tunneling resistance R(V) in a superconductor-degenerate semiconductor Schottky contact (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Location of the minimum of the differential tunneling resistance R(V) in a superconductor-degenerate semiconductor Schottky contact (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1140/epjb/e2003-00103-x (literal)

Alternative label

• Lissitski M.P., Naddeo A., Nappi C., Tagliacozzo A., Gubankov V.N., Monaco R., Russo M. (2003)
  Location of the minimum of the differential tunneling resistance R(V) in a superconductor-degenerate semiconductor Schottky contact
  in The European physical journal. B, Condensed matter physics (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lissitski M.P., Naddeo A., Nappi C., Tagliacozzo A., Gubankov V.N., Monaco R., Russo M. (literal)

Pagina inizio

• 309 (literal)

Pagina fine

• 314 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 32 (literal)

Rivista

• ?The ?European physical journal. B, Condensed matter physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Lissitski, MP (Reprint Author), Consiglio Nazl Ric E Caianiello, Ist Cibernet, Pozzuoli, Naples, Italy. Consiglio Nazl Ric E Caianiello, Ist Cibernet, Pozzuoli, Naples, Italy. Univ Naples Federico II, Dipartimento Sci Fis, INFM, Naples, Italy. Russian Acad Sci, Inst Radio Engn \& Elect, Moscow 103907, Russia. Univ Salerno, Dipartimento Sci Fis, INFM, I-84100 Salerno, Italy. (literal)

Titolo

• Location of the minimum of the differential tunneling resistance R(V) in a superconductor-degenerate semiconductor Schottky contact (literal)

Abstract

• Measurements of differential resistance in a superconductor-degenerate semiconductor junction Nb-n++GaAs at T=1.6K show close similarity to those for a conventional superconductor-insulator-normal metal junction, except for the position of the minimum which is located at 3.6 meV. Using a simple model for the charge screening at the Schottky barrier, we give an argument why this minimum is by far displaced with respect to the superconducting gap energy (delta=1.5meV for bulk Nb). We argue that a rebuilding of the density of states takes place at the barrier, due to the imperfect metal screening in the degenerate semiconductor. Energy states close to the degenerate semiconductor Fermi energy are depleted at the barrier and are not available for tunneling, up to an energy Eg which adds to the superconducting gap. (literal)

Prodotto di

• Istituto di cibernetica \"Edoardo Caianiello\" (ISASI) (Istituto)

Autore CNR

• MAURIZIO RUSSO (Unità di personale interno)
• ROBERTO MONACO (Unità di personale interno)
• CIRO NAPPI (Persona)
• MIKHAIL LISITSKIY (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di cibernetica \"Edoardo Caianiello\" (ISASI) (Istituto)

Autore CNR di

• MAURIZIO RUSSO (Unità di personale interno)
• CIRO NAPPI (Persona)
• MIKHAIL LISITSKIY (Unità di personale interno)
• ROBERTO MONACO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• ?The ?European physical journal. B, Condensed matter physics (Rivista)