Characterization of Ga2O3 based MRISiC hydrogen gas sensors (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Characterization of Ga2O3 based MRISiC hydrogen gas sensors (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Alternative label

• A. Trinchi; S. Kaciulis; L. Pandolfi; M.K. Ghantasala; Y.X. Li; W. Wlodarski; S. Viticoli; E. Comini; G. Sberveglieri (2004)
  Characterization of Ga2O3 based MRISiC hydrogen gas sensors
  in Sensors and actuators. B, Chemical (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. Trinchi; S. Kaciulis; L. Pandolfi; M.K. Ghantasala; Y.X. Li; W. Wlodarski; S. Viticoli; E. Comini; G. Sberveglieri (literal)

Pagina inizio

• 129 (literal)

Pagina fine

• 135 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 103 (literal)

Rivista

• Sensors and actuators. B, Chemical (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Vic. 3001, Australia Cooperative Research Center (CRC) for Microtechnology, Hawthorn, Australia Institute for the Study of Nanostructured Materials, ISMN-CNR, Monterotondo (RM), Italy Department of Mechanical and Aeronautical Engineering, Western Michigan University, Kalamazoo, MI, USA The State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Shanghai 200050, China f Department of Materials Chemistry and Physics, University of Brescia, Brescia, Italy (literal)

Titolo

• Characterization of Ga2O3 based MRISiC hydrogen gas sensors (literal)

Abstract

• This paper presents the results of our investigations on the hydrogen gas response of Pt/Ga2O3/SiC devices operated as Schottky diodes highlighting the importance of gallium oxide as a layer within the device. The Ga2O3 thin films were prepared using the sol-gel technique. The investigation reported in this paper also includes the compositional characterization of the Ga2O3 films using X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). Results show the films consisted of stoichiometric Ga2O3, with a thickness of less than 100 nm. RBS analysis indicated that the films are stoichiometric and reproducible. For gas sensing experiments, the diodes were biased at a constant current varying between 1 and 2 mA and their responses to H2 in different ambient was measured. The sensors were extremely stable, varying from its mean baseline value by only 0.014%. When operated in oxygen rich ambient the magnitude of the responses was larger. The response and recovery times also appear to be large, owing to nearly total interaction or combustion of the dissociated hydrogen molecules on the surface of the device. (literal)

Prodotto di

• Materiali nanostrutturati di ossidi metallici e altri semicondutttori per la sensoristica e applicazioni avanzate (MD.P05.015.001) (Modulo)
• Institute of Acoustics and Sensors \"Orso Mario Corbino\" (IDASC) (Istituto)

Autore CNR

• ELISABETTA COMINI (Unità di personale esterno)
• GIORGIO SBERVEGLIERI (Unità di personale esterno)
• SAULIUS KACIULIS (Persona)

Incoming links:

Prodotto

• Institute of Acoustics and Sensors \"Orso Mario Corbino\" (IDASC) (Istituto)
• Materiali nanostrutturati di ossidi metallici e altri semicondutttori per la sensoristica e applicazioni avanzate (MD.P05.015.001) (Modulo)

Autore CNR di

• ELISABETTA COMINI (Unità di personale esterno)
• SAULIUS KACIULIS (Persona)
• GIORGIO SBERVEGLIERI (Unità di personale esterno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Sensors and actuators. B, Chemical (Rivista)