Spirobifluorene derivatives, their preparation and uses thereof (Brevetto)

Type

• Prodotto della ricerca (Classe)
• Brevetto (Classe)
• Brevetto (Classe)

Label

• Spirobifluorene derivatives, their preparation and uses thereof (Brevetto) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Alternative label

• G. Fioravanti; L. Mattiello; L. Rampazzo (2009)
  Spirobifluorene derivatives, their preparation and uses thereof
  
  (literal)

Titolo

• Spirobifluorene derivatives, their preparation and uses thereof (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• G. Fioravanti; L. Mattiello; L. Rampazzo (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#proprieta

• Merck (literal)

Http://www.cnr.it/ontology/cnr/brevetti.owl#tipoDiBrevetto

• Internazionale (literal)

Numero brevetto

• US2009302274 (literal)

Anno di deposito

• 2009 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Department of ICMMPM, Sede Chimica, Universita ? di Roma ''La Sapienza'', Via del Castro Laurenziano 7, 00161 Roma, Italy (literal)

Titolo

• Spirobifluorene derivatives, their preparation and uses thereof (literal)

Abstract

• The invention concerns Spirobifluorene derivatives having the general formula (II) and the corresponding, radical anions that can be represented via the general formula (II): in which K, L, M and N, the same or different from each other, are independently: H or A-C-O, with the proviso that it is never K-L-M-N-H, wherein A is an aromatic group, possibly substituted with at least an R' group selected in the group of the substituents commonly used in organic chemistry and/or at least one R group where R=aliphatic radical. The invention also concerns the method for preparing said derivatives and radical anions. Said compounds are applied in the field of components for molecular electronics, in particular systems for electroluminescence, molecular-based computational systems, OLEDs, molecular switching components, components for non-linear optics, field-effect transistors and semiconductors with negative differential resistance. (literal)

Prodotto di

• Sintesi e crescita di film e superfici nanostrutturate (PM.P05.004.002) (Modulo)
• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)

Autore CNR

• leonardo mattiello (Unità di personale esterno)

Incoming links:

Prodotto

• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)
• Sintesi e crescita di film e superfici nanostrutturate (PM.P05.004.002) (Modulo)

Autore CNR di

• leonardo mattiello (Unità di personale esterno)