Compressively strained Ge channels on relaxed SiGe buffer layers (Articolo in rivista)

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Label
  • Compressively strained Ge channels on relaxed SiGe buffer layers (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0921-5107(02)00662-1 (literal)
Alternative label
  • M. Bollani(a); E. Müller(b); S. Signoretti(c); C. Beeli(c);G. Isella(d); M. Kummer(c);H. von Känel (c, d); (2003)
    Compressively strained Ge channels on relaxed SiGe buffer layers
    in Materials Science and Engineering B; ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE (Svizzera)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Bollani(a); E. Müller(b); S. Signoretti(c); C. Beeli(c);G. Isella(d); M. Kummer(c);H. von Känel (c, d); (literal)
Pagina inizio
  • 102 (literal)
Pagina fine
  • 105 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0921510702006621 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 101 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1-3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Instituto Nazionale per la Fisica della Materia and Dipartimento Scienza dei Materiali, Universita' di Milano 'Bicocca', via Cozzi 53, I-20125 Milan, Italy b Labor für Mikro- und Nanostrukturen, Paul Scherrer Institut Würenlingen und Villigen, CH-5232 Villigen, PSI, Switzerland c Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland d Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica, Politecnico di Milano, via Anzani 52, I-22100, Como, Italy (literal)
Titolo
  • Compressively strained Ge channels on relaxed SiGe buffer layers (literal)
Abstract
  • Strain-induced roughening and dislocation formation has been studied by high-resolution transmission electron microscopy (HRTEM) in compressively strained Ge quantum wells on linearly graded SiGe buffer layers grown by low-energy plasma-enhanced chemical vapour deposition (LEPECVD). We show that for appropriately chosen plasma densities and substrate temperatures, abrupt interfaces can be achieved on both sides of the Ge channels, when additional hydrogen is supplied to the reactive gases, even for channel widths above the critical thickness for dislocation formation. Optimized modulation doped Ge quantum wells (MODQWs) exhibit the highest hole mobilities observed to date, approaching values of similar to 90000 cm(2)V(-1)s(-1) for a sheet density of similar to6 x 10(11) cm(-2) at liquid He temperatures. (literal)
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