MOCVD of CoAl2O4 Thin Films from {Co[Al(OiC3H7)4]2} as precursor (Articolo in rivista)

Type
Label
  • MOCVD of CoAl2O4 Thin Films from {Co[Al(OiC3H7)4]2} as precursor (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1021/cm0615931 (literal)
Alternative label
  • El Habra N. ; Crociani L. ; Sada C. ; Zanella P. ; Casarin M. ; Rossetto G. ; Carta G. ; Paolucci G. (2007)
    MOCVD of CoAl2O4 Thin Films from {Co[Al(OiC3H7)4]2} as precursor
    in Chemistry of materials
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • El Habra N. ; Crociani L. ; Sada C. ; Zanella P. ; Casarin M. ; Rossetto G. ; Carta G. ; Paolucci G. (literal)
Pagina inizio
  • 3381 (literal)
Pagina fine
  • 3386 (literal)
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  • http://pubs.acs.org/doi/pdf/10.1021/cm0615931 (literal)
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  • 19 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 14 (literal)
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  • The complex {Co[Al(OiC3H7)4]2}, a heterobimetallic alkoxide already described by Mehrotra, has been tested for the first time as single-source precursor for the vapor-phase deposition of thin films of CoAl2O4. {Co[Al(OiC3H7)4]2} is characterized by a significant volatility in the 100-150 °C temperature range at about 1 Torr pressure, and high deposition rates may be achieved. In comparison with the growth process based on dual-source precursor systems it is noteworthy to observe that the films obtained by using {Co[Al(OiC3H7)4]2} are characterized by: (i) a better control of the stoichiometry (Co:Al ratio); (ii) a higher phase purity; and (iii) a significantly lower deposition temperature (350 vs 1000 °C), thus allowing the use of thermal sensitive substrates. Deposits obtained in the 350-550 °C range appear amorphous, but their annealing in air between 500 and 700 °C induces crystallization and a color change to green. At variance to that, the annealing in N2 does not originate any color variations and crystallization takes place at 700 °C. Green and blue crystalline samples present very similar X-ray diffraction patterns but different UV-vis spectra. Nevertheless, a thermal treatment above 700 °C produces blue, stable, and polycrystalline CoAl2O4 films. (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1,2,4,6,7 : Istituto di Chimica Inorganica e delle Superfici (ICIS)-CNR, Padova / 3 : Dipartimento di Fisica, Università degli Studi di Padova / 5 : Dipartimento di Scienze Chimiche, Università degli Studi di Padova / 8 : Dipartimento di Chimica, Università Ca' Foscari di Venezia (literal)
Titolo
  • MOCVD of CoAl2O4 Thin Films from {Co[Al(OiC3H7)4]2} as precursor (literal)
Abstract
  • A new synthetic route for the deposition of CoAl2O4 thin films at low temperature via MOCVD using the single-source precursor {Co[Al(OiC3H7)4]2} is presented. Molecular properties of {Co[Al(OiC3H7)4]2} have been investigated by means of NMR spectroscopy, mass spectrometry, and thermal analysis. Deposits have been characterized by XRD, AFM, UV-vis, and SIMS measurements. (literal)
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