Ge-Si intermixing in Ge nanostructures on Si(111): an XAFS versus STM study (Articolo in rivista)

Type
Label
  • Ge-Si intermixing in Ge nanostructures on Si(111): an XAFS versus STM study (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • N. Motta; F. Boscherini; A. Sgarlata; A. Balzarotti; G. Capellini; F. Ratto; F. Rosei (2007)
    Ge-Si intermixing in Ge nanostructures on Si(111): an XAFS versus STM study
    in Physical review. B, Condensed matter and materials physics; The American Physical Society, College Park, MD 20740-3844 (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • N. Motta; F. Boscherini; A. Sgarlata; A. Balzarotti; G. Capellini; F. Ratto; F. Rosei (literal)
Pagina inizio
  • 035337 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 75 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • School of Engineering Systems, Queensland University of Technology, 2 George Street, Brisbane 4001 QLD, Australia; Dipartimento di Fisica and CNISM, Università di Bologna, viale Carlo Berti Pichat 6/2, I-40 Bologna, Italy; Dipartimento di Fisica, Università di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma, Italy; Dipartimento di Fisica, Università di Roma Tre, Via della Vasca Navale 84, I-00146 Roma, Italy; INRS-EMT, Université du Quebec, 1650 Boulevard Lionel Boulet, Varennes, Quebec J3X 1S2, Canada (literal)
Titolo
  • Ge-Si intermixing in Ge nanostructures on Si(111): an XAFS versus STM study (literal)
Abstract
  • We report a detailed investigation of interdiffusion processes that occur during the growth of germanium nanostructures on the ?111?-oriented surface of silicon. In particular, X-ray Absorption Fine Structure ?XAFS? measurements performed ex situ show that a Ge1-xSix alloy forms during deposition, with average composition x varying between 0.25 and 0.50, depending on substrate temperature and total coverage. By fitting the Si nearest-neighbor numbers around Ge as a function of the deposited thickness with a simple model, the effective vertical composition profile in the growth direction has been estimated. The latter has been described with a static effective diffusion length of ?10.0±1.5? nm at 530 °C and ?5±1? nm at 450 °C, which is interpreted as the dominance of surface transport processes in the intermixing dynamics. The analysis of the data on Ge-Ge bond length indicates a decrease of the Ge-Ge atomic distances with increasing Ge fraction, confirming previous theoretical predictions for strained epilayers. The XAFS results are compared to morphological information obtained by scanning tunneling microscopy investigations carried out in situ, yielding a satisfactory description for the epitaxy of this system. (literal)
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