Boron ripening during solid-phase epitaxy of amorphous silicon (Articolo in rivista)

Type
Label
  • Boron ripening during solid-phase epitaxy of amorphous silicon (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.69.045204 (literal)
Alternative label
  • Mattoni A; Colombo L (2004)
    Boron ripening during solid-phase epitaxy of amorphous silicon
    in Physical review. B, Condensed matter and materials physics; American Physical Society (APS), College Pk (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mattoni A; Colombo L (literal)
Pagina inizio
  • 045204 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://prb.aps.org/abstract/PRB/v69/i4/e045204 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 69 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Mattoni, A (Reprint Author), Univ Cagliari, INFM, Cittadella Univ, I-09042 Cagliari, Italy. Univ Cagliari, INFM, I-09042 Cagliari, Italy. Univ Cagliari, Dipartimento Fis, I-09042 Cagliari, Italy. (literal)
Titolo
  • Boron ripening during solid-phase epitaxy of amorphous silicon (literal)
Abstract
  • By means of large-scale molecular dynamics simulations we provide a thorough atomic-scale picture of boron incorporation in crystalline silicon upon solid-phase epitaxy. The present results show that boron can either be incorporated as a substitutional dopant or form clusters with a low content of silicon self-interstitials. A full characterization of the formation process of boron-interstitial clusters and their stoichiometry is presented. The present results are consistent with available experimental information and also provide a deep physical insight into B-doped silicon solid-phase epitaxy. (literal)
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