Chemical vapor deposition of Cr-based thin films as diffusion barriers in copper metallization (Articolo in rivista)

Type
Label
  • Chemical vapor deposition of Cr-based thin films as diffusion barriers in copper metallization (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.426-432.3439 (literal)
Alternative label
  • Maury F.; Gasqueres C.; Duminica F.-D.; Ossola F. (2003)
    Chemical vapor deposition of Cr-based thin films as diffusion barriers in copper metallization
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Maury F.; Gasqueres C.; Duminica F.-D.; Ossola F. (literal)
Pagina inizio
  • 3439 (literal)
Pagina fine
  • 3444 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Conference: 4th International Conference on Processing and Manufacturing of Advanced Materials : Thermec 2003 Location: UNIV CARLOS III MADRID, MADRID, SPAIN Date: JUL 07-11, 2003 Sponsor(s): Minerals, Met & Mat Soc ISBN-13: 978-0-87849-919-9 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scientific.net/MSF.426-432.3439 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 426-4 (literal)
Rivista
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1-3 : Ctr. Interuniv. Rech. d'Ing. Mat., ENSIACET, 118 route de Narbonne, 31077 Toulouse Cedex 4, France / 4 : Ist. Chim. Inorg. Superfici (ICIS), Area della Ricerca del CNR, Corso Stati Uniti 4, 35127 Padova, Italy (literal)
Titolo
  • Chemical vapor deposition of Cr-based thin films as diffusion barriers in copper metallization (literal)
Abstract
  • Two types of Cr-based thin films were grown by MOCVD and their behavior as diffusion barrier against Cu was investigated. Cr3(C,N)2 layers were deposited using Cr(NEt2)4 as single-source precursor in the temperature range 400-420 °C and CrSixCy was grown using Cr[CH2SiMe3]4 at 475-500 °C. Both films are XRD amorphous. Annealing experiments of the Cu/barrier/Si structures revealed the Cr-C-N barrier fails at 650 °C due to the crystallization of Cr3(C0.8N0.2)2. The barrier CrSixCy is more thermally stable and the failure temperature was found in the range 650-700 °C due to Cu diffusion through the barrier and the formation of Cu3Si. (literal)
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