http://www.cnr.it/ontology/cnr/individuo/prodotto/ID180730

Wide-band modelling of CMOS interconnections and voiding damages with the lumped element LE-FDTD method (Articolo in rivista)

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Wide-band modelling of CMOS interconnections and voiding damages with the lumped element LE-FDTD method (Articolo in rivista) (literal)

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Alternative label

Alimenti F.; Impronta M.; Scorzoni A.; Roselli L. (2004)
Wide-band modelling of CMOS interconnections and voiding damages with the lumped element LE-FDTD method
in International journal of numerical modelling (Print); John Wiley & Sons, Ltd., Chichester (Regno Unito)
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1- DIEI, University of Perugia, Italy. 2 - CNR IMM-LAMEL, Bologna, Italy. (literal)

Titolo

Wide-band modelling of CMOS interconnections and voiding damages with the lumped element LE-FDTD method (literal)

Abstract

This paper illustrates the application of a lumped element-finite difference time domain (LE-FDTD) simulator to the wide-band modelling of CMOS interconnections. To achieve very accurate results the short-open calibration (SOC) technique has been adopted. Specific parameters of a CMOS interconnection laterally screened by a stack of metal vias have been extracted in the two cases of an unperturbed and a purposely damaged metal line. The behaviour of void-like defects in the metal line has been also studied using the fully three-dimensional capabilities of the simulator. It has been demonstrated that, at least in the simulated cases, only the specific resistance is affected by damaging. (literal)

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