Reduced quantum confinement effect and electron-hole separation in SiGe nanowires (Articolo in rivista)

Type
Label
  • Reduced quantum confinement effect and electron-hole separation in SiGe nanowires (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.82.045207 (literal)
Alternative label
  • M. Amato;M. Palummo;S. Ossicini (2009)
    Reduced quantum confinement effect and electron-hole separation in SiGe nanowires
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Amato;M. Palummo;S. Ossicini (literal)
Pagina inizio
  • 201302(R1) (literal)
Pagina fine
  • 201302(R4) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 79 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 20 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento di Fisica and CNR-INFM-S3 \"NanoStructures and BioSystems at Surfaces\",Università di Modena e Reggio Emilia, via Campi 213/A, 41100 Modena, Italy,Dipartimento di Fisica, European Theoretical Spectroscopy Facility (ETSF), CNR-INFM-SMC,Università di Roma, \"Tor Vergata,\" via della Ricerca Scientifica 1, 00133 Roma, Italy 3Dipartimento di Scienze e Metodi dell Ingegneria and CNR-INFM-S3 \"NanoStructures and BioSystems at Surfaces\",Università di Modena e Reggio Emilia, via Amendola 2 Padiglione Morselli, I-42100 Reggio Emilia, Italy (literal)
Titolo
  • Reduced quantum confinement effect and electron-hole separation in SiGe nanowires (literal)
Abstract
  • Using first-principles methods, we investigate the structural and electronic properties of SiGe nanowiresbased heterostructures, whose lattice contains the same number of Si and Ge atoms but arranged in a different manner. Our results demonstrate that the wires with a clear interface between Si and Ge regions not only form the most stable structures but show a strongly reduced quantum confinement effect. Moreover, we, with the inclusion of many-body effects, prove that these nanowires--under optical excitation--display a clear electronhole separation property which can have relevant technological applications. (literal)
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