http://www.cnr.it/ontology/cnr/individuo/prodotto/ID178903

Silicon carbide and its use as a radiation detector material (Articolo in rivista)

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Silicon carbide and its use as a radiation detector material (Articolo in rivista) (literal)

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Alternative label

Nava F.; Bertuccio G.; Cavallini A.; Vittone, E. (2008)
Silicon carbide and its use as a radiation detector material
in Measurement science & technology (Print); IOP Publishing Ltd. (Institute of Physics Publishing Ltd), "Bristol ; London" (Regno Unito)
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Physics Department, University of Modena, via G Campi 213/a, 41100 Modena, Italy; National Institute of Nuclear Physics (INFN), Bologna, Italy; Department of Electronics Engineering and Information Science and INFN Milano, Politecnico of Milano, P.za L da Vinci 32, 20133 Milano, Italy; Physics Department, University of Bologna, and CNISM viale Berti Pichat 6/2, 40127 Bologna, Italy; Experimental Physics Department/NIS Excellence Center, University of Torino, CNISM and INFN Torino, via P Giuria 1, 10125 Torino, Italy (literal)

Titolo

Abstract

We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H-SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented. The most recent data on charge transport parameters across the Schottky barrier and how these are related to radiation spectrometer performance are presented. Experimental results on pixel detectors having equivalent noise energies of 144 eV FWHM (7.8 electrons rms) and 196 eV FWHM at +27 oC and +100 oC, respectively, are reported. Results of studying the radiation resistance of 4H-SiC are analysed. The data on the ionization energies, capture cross section, deep-level centre concentrations and their plausible structures formed in SiC as a result of irradiation with various particles are reviewed. The emphasis is placed on the study of the 1 MeV neutron irradiation, since these thermal particles seem to play the main role in the detector degradation. An accurate electrical characterization of the induced deep-level centres by means of PICTS technique has allowed one to identify which play the main role in the detector degradation. (literal)

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