Boron electrical activation in crystalline Si after millisecond nonmelting laser irradiation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Boron electrical activation in crystalline Si after millisecond nonmelting laser irradiation (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1149/1.2939129 (literal)

Alternative label

• Mannino G; La Magna A; Privitera V; Christensen JS; Vines L; Svensson BG (2008)
  Boron electrical activation in crystalline Si after millisecond nonmelting laser irradiation
  in Journal of the Electrochemical Society; Electrochemical Society, Pennington [NJ] (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Mannino G; La Magna A; Privitera V; Christensen JS; Vines L; Svensson BG (literal)

Pagina inizio

• H603 (literal)

Pagina fine

• H605 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JESOAN00015500000800H603000001&idtype=cvips&gifs=yes&ref=no (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 155 (literal)

Rivista

• Journal of the Electrochemical Society (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR IMM, I-95121 Catania, Italy 2. Univ Oslo, Dept Phys, N-0316 Oslo, Norway (literal)

Titolo

• Boron electrical activation in crystalline Si after millisecond nonmelting laser irradiation (literal)

Abstract

• We investigated boron (B) activation and diffusion in Si following millisecond annealing in the nonmelting regime by infrared laser. Simulations of the thermal field were also performed to calculate the process temperature. The laser annealed (LA) samples show an electrical activation higher by a factor of 2 as compared to rapid thermal annealed (RTA) samples, for comparable diffusion. When LA samples are further processed by RTA, the final diffusion extent is almost identical to an RTA treated sample, while electrical activation occurs. We argue that B atoms can temporarily occupy substitutional sites during the early stage of annealing; further annealing leads to interstitial clustering and dissolution, which enhance dopant diffusion during rapid thermal processing. (C) 2008 The Electrochemical Society. (literal)

Editore

• Electrochemical Society (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e processi avanzati per celle fotovoltaiche (MD.P05.005.004) (Modulo)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Autore CNR

• GIOVANNI MANNINO (Persona)
• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• GIOVANNI MANNINO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e processi avanzati per celle fotovoltaiche (MD.P05.005.004) (Modulo)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Editore di

• Electrochemical Society (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of the Electrochemical Society (Rivista)